Storage Element, Storage Device, And Signal Processing Circuit

ABSTRACT

A signal processing circuit whose power consumption can be suppressed is provided. In a period during which a power supply voltage is not supplied to a storage element, data stored in a first storage circuit corresponding to a nonvolatile memory can be held by a first capacitor provided in a second storage circuit. With the use of a transistor in which a channel is formed in an oxide semiconductor layer, a signal held in the first capacitor is held for a long time. The storage element can accordingly hold the stored content (data) also in a period during which the supply of the power supply voltage is stopped. A signal held by the first capacitor can be converted into the one corresponding to the state (the on state or off state) of the second transistor and read from the second storage circuit. Consequently, an original signal can be accurately read.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/341,412, filed Dec. 30, 2011, now allowed, which claims the benefitof foreign priority applications filed in Japan as Serial No.2011-000435 on Jan. 5, 2011 and Serial No. 2011-113414 on May 20, 2011,all of which are incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a nonvolatile storage device which cankeep a stored logic state even when power is turned off and also relatesto a signal processing circuit including the nonvolatile storage device.Further, the present invention relates to driving methods of the storagedevice and the signal processing circuit. Furthermore, the presentinvention relates to an electronic device including the signalprocessing circuit.

2. Description of the Related Art

A signal processing circuit such as a central processing unit (CPU) hasa variety of configurations depending on its application but isgenerally provided with some kinds of storage devices such as a registerand a cache memory as well as a main memory for storing data or aprogram. A register has a function of temporarily holding data forcarrying out arithmetic processing, holding a program execution state,or the like. In addition, a cache memory is located between anarithmetic circuit and a main memory in order to reduce low-speed accessto the main memory and speed up the arithmetic processing.

In a storage device such as a register or a cache memory, writing ofdata needs to be performed at higher speed than in a main memory. Thus,in general, a flip-flop or the like is used as a register, and a staticrandom access memory (SRAM) or the like is used as a cache memory. Thatis, a volatile storage device in which data is erased when supply ofpower supply potential is stopped is used for such a register, a cachememory, or the like.

In order to reduce power consumption, a method for temporarily stoppingsupply of a power supply voltage to a signal processing circuit in aperiod during which data is not input and output has been suggested. Inthe method, a nonvolatile storage device is located in the periphery ofa volatile storage device such as a register or a cache memory, so thatthe data is temporarily stored in the nonvolatile storage device. Thus,the register, the cache memory, or the like holds data even while supplyof power supply potential is stopped in the signal processing circuit(for example, see Patent Document 1).

In addition, in the case where supply of a power supply voltage isstopped for a long time in a signal processing circuit, data in avolatile storage device is transferred to an external storage devicesuch as a hard disk or a flash memory before the supply of the powersupply voltage is stopped, so that the data can be prevented from beingerased.

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    H10-078836

SUMMARY OF THE INVENTION

In the case where data of a volatile storage device is stored in anonvolatile storage device located in the periphery of the volatilestorage device while the supply of the power supply voltage is stoppedin a signal processing circuit, such a nonvolatile storage device ismainly formed using a magnetic element or a ferroelectric; thus, themanufacturing process of the signal processing circuit is complex.

In the case where data of the volatile storage device is stored in theexternal storage device while the supply of the power supply voltage isstopped in the signal processing circuit, it takes a long time forreturning data from the external storage device to the volatile storagedevice. Therefore, back up of data using the external storage device isnot suitable in the case where the power supply is stopped for a shorttime so as to reduce power consumption.

In view of the above-described problems, it is an object of the presentinvention to provide a signal processing circuit for which a complexmanufacturing process is not necessary and whose power consumption canbe suppressed and a driving method of the signal processing circuit. Inparticular, it is an object to provide a signal processing circuit whosepower consumption can be suppressed by stopping the power supply for ashort time and a driving method of the signal processing circuit.

(One Embodiment of Structure of Storage Element)

One embodiment of a structure of a storage element according to thepresent invention is described below.

(Structure 1 of Storage Element)

One embodiment of the present invention is a storage element including afirst storage circuit, a second storage circuit, a first switch, asecond switch, and a third switch. The first storage circuit holds dataonly in a period during which a power supply voltage is supplied. Thesecond storage circuit is a storage element including a first capacitor,a first transistor, and a second transistor. The storage element has thefollowing structure.

The first transistor is a transistor in which a channel is formed in anoxide semiconductor layer. Here, as the first transistor in which thechannel is formed in the oxide semiconductor layer, an n-channelenhancement (normally-off) transistor whose leakage current (off-statecurrent) is extremely low is used. When supply of a power supply voltageto the storage element is stopped, a ground potential (0 V) continues tobe input to a gate of the first transistor; for example, the gate of thefirst transistor is grounded through a load such as a resistor. One of asource and a drain of the first transistor is electrically connected toone of a pair of electrodes of the first capacitor and a gate of thesecond transistor. One of a source and a drain of the second transistoris electrically connected to a first power supply line, and the otherthereof is electrically connected to a first terminal of the firstswitch. A second terminal of the first switch is electrically connectedto a first terminal of the second switch. A second terminal of thesecond switch is electrically connected to a second power supply line.

A first control signal is input to the gate of the first transistor. Asfor each of the first switch and the second switch, a conduction stateor a non-conduction state between the first terminal and the secondterminal is selected by a second control signal which is different fromthe first control signal. When the first terminal and the secondterminal of one of the first switch and the second switch are in theconduction state, the first terminal and the second terminal of theother of the first switch and the second switch are in thenon-conduction state. As for the third switch, a conduction state or anon-conduction state between a first terminal and a second terminal isselected by a third control signal which is different from the firstcontrol signal and the second control signal.

A signal corresponding to data held in the first storage circuit isinput to the other of the source and the drain of the first transistor.A signal output from the second terminal of the first switch or aninverted signal thereof is input to the first storage circuit throughthe third switch in which the first terminal and the second terminal arein the conduction state.

Another embodiment of the structure of the storage element according tothe present invention is described below.

(Structure 2 of Storage Element)

Another embodiment of the present invention is a storage elementincluding a first storage circuit, a second storage circuit, a firstswitch, a second switch, a third switch, and a logic element whichinverts a phase of an input signal and outputs the signal (hereinafter,referred to as a phase-inversion element). The first storage circuitholds data only in a period during which a power supply voltage issupplied. The second storage circuit is a storage element including afirst capacitor, a first transistor, and a second transistor. Thestorage element has the following structure.

The first transistor is a transistor in which a channel is formed in anoxide semiconductor layer. Here, as the first transistor in which thechannel is formed in the oxide semiconductor layer, an n-channelenhancement (normally-off) transistor whose leakage current (off-statecurrent) is extremely low is used. When supply of a power supply voltageto the storage element is stopped, a ground potential (0 V) continues tobe input to a gate of the first transistor; for example, the gate of thefirst transistor is grounded through a load such as a resistor. One of asource and a drain of the first transistor is electrically connected toone of a pair of electrodes of the first capacitor and a gate of thesecond transistor. One of a source and a drain of the second transistoris electrically connected to a first power supply line, and the otherthereof is electrically connected to a first terminal of the firstswitch. A second terminal of the first switch is electrically connectedto a first terminal of the second switch. A second terminal of thesecond switch is electrically connected to a second power supply line.The second terminal of the first switch, the first terminal of thesecond switch, and an input terminal of the phase-inversion element areelectrically connected to each other.

A first control signal is input to the gate of the first transistor. Asfor each of the first switch and the second switch, a conduction stateor a non-conduction state between the first terminal and the secondterminal is selected by a second control signal which is different fromthe first control signal. When the first terminal and the secondterminal of one of the first switch and the second switch are in theconduction state, the first terminal and the second terminal of theother of the first switch and the second switch are in thenon-conduction state. As for the third switch, a conduction state or anon-conduction state between a first terminal and a second terminal isselected by a third control signal which is different from the firstcontrol signal and the second control signal.

A signal corresponding to data held in the first storage circuit isinput to the other of the source and the drain of the first transistor.A signal output from the phase-inversion element or an inverted signalthereof is input to the first storage circuit through the third switchin which the first terminal and the second terminal are in theconduction state.

In the above (Structure 2 of Storage Element), the phase-inversionelement may be supplied with, as a power supply voltage, a voltagecorresponding to a difference between a potential input to the firstpower supply line and a potential input to the second power supply line.

In the above (Structure 2 of Storage Element), the storage element mayfurther include a second capacitor so that one of a pair of electrodesof the second capacitor is electrically connected to the input terminalof the phase-inversion element. A constant potential can be input to theother of the pair of electrodes of the second capacitor; for example, alow power supply potential or a high power supply potential can beinput. The other of the pair of electrodes of the second capacitor maybe electrically connected to the first power supply line.

In the above (Structure 1 of Storage Element) or (Structure 2 of StorageElement), the first switch may include a transistor having aconductivity type, and the second switch may include a transistor havinganother conductivity type. Here, in this specification, in the casewhere a transistor is used as a switch, a first terminal of the switchcorresponds to one of a source and a drain of the transistor, a secondterminal of the switch corresponds to the other of the source and thedrain of the transistor, and conduction or non-conduction between thefirst terminal and the second terminal of the switch (i.e., an on stateor an off state of the transistor) is selected by a control signal inputto a gate of the transistor.

In the above (Structure 1 of Storage Element) or (Structure 2 of StorageElement), the third switch may include a transistor. The transistor maybe either an n-channel transistor or a p-channel transistor.Alternatively, an n-channel transistor and a p-channel transistor may beused in combination. For example, an analog switch can be used as thethird switch.

In the above (Structure 1 of Storage Element) or (Structure 2 of StorageElement), a constant potential can be input to the other of the pair ofelectrodes of the first capacitor; for example, a low power supplypotential or a high power supply potential can be input. The other ofthe pair of electrodes of the first capacitor may be electricallyconnected to the first power supply line.

In the above (Structure 1 of Storage Element) or (Structure 2 of StorageElement), the first storage circuit may be supplied with, as the powersupply voltage, a voltage corresponding to a difference between apotential input to the first power supply line and a potential input tothe second power supply line. In a period during which the first storagecircuit is not supplied with the power supply voltage, the differencebetween the potential input to the first power supply line and thepotential input to the second power supply line can be (substantially)zero.

In the above (Structure 1 of Storage Element) or (Structure 2 of StorageElement), for the first transistor, a transistor including two gates,one of which is provided over an oxide semiconductor layer, and theother of which is provided below the oxide semiconductor layer can beused. The first control signal can be input to one of the gates, and afourth control signal can be input to the other of the gates. The fourthcontrol signal may be a signal having a constant potential. The constantpotential may be a potential supplied to the first power supply line orthe second power supply line. Note that the two gates may beelectrically connected to each other so that the first control signal isinput. The threshold voltage or the like of the first transistor can becontrolled by a signal input to the other of the gates. Further, theoff-state current of the first transistor can be further reduced.

In the above (Structure 1 of Storage Element) or (Structure 2 of StorageElement), a transistor in which a channel is formed in a layer or asubstrate including a semiconductor other than an oxide semiconductorcan be used for any of the transistors other than the first transistoramong the transistors used for the storage element; for example, atransistor in which a channel is formed in a silicon layer or a siliconsubstrate can be used. Alternatively, a transistor in which a channel isformed in an oxide semiconductor layer can be used for all thetransistors used for the storage element. Further alternatively, atransistor in which a channel is formed in an oxide semiconductor layercan be used for any of the transistors used for the storage elements andthe first transistor, and a transistor in which a channel is formed in alayer or a substrate including a semiconductor other than an oxidesemiconductor can be used for the rest of the transistors.

In the above (Structure 1 of Storage Element) or (Structure 2 of StorageElement), a structure can be employed in which the first storage circuitincludes a first phase-inversion element and a second phase-inversionelement, an input terminal of the first phase-inversion element iselectrically connected to an output terminal of the secondphase-inversion element, and an input terminal of the secondphase-inversion element is electrically connected to an output terminalof the first phase-inversion element. The first phase-inversion elementand the second phase-inversion element each output a signalcorresponding to an input signal only in a period during which a powersupply potential is supplied. Note that as the phase-inversion element,for example, an inverter, a clocked inverter, or the like can be used.The structure of the first storage circuit is not limited thereto, and anonvolatile memory such as a known latch circuit or a flip-flop circuitcan be freely used for the first storage circuit.

(Driving Method of Storage Element)

In the above storage element, in the case where in order to reduce powerconsumption in data holding, after supply of the power supply voltage,the supply of the power supply voltage is stopped and then the powersupply voltage is supplied again, a driving method can be as follows.

(Normal Operation)

In a period during which the power supply voltage is supplied to thestorage element, the first storage circuit holds data. At this time, thefirst terminal and the second terminal of the third switch are in thenon-conduction state by the third control signal. Note that the firstterminal and the second terminal of each of the first switch and thesecond switch may be in either the conduction state or thenon-conduction state; in other words, the second control signal may haveeither a high-level potential or a low-level potential. Further, thestate of the first transistor may be in either the on state or the offstate; in other words, the first control signal may have either ahigh-level potential or a low-level potential.

(Operation Before Stop of Supply of Power Supply Voltage)

Before supply of the power supply voltage to the storage element isstopped, the first transistor is turned on by the first control signal.Thus, a signal corresponding to data held in the first storage circuitis input to the gate of the second transistor through the firsttransistor. The signal input to the gate of the second transistor isheld by the first capacitor. After that, the first transistor is turnedoff. In this manner, the signal corresponding to the data held in thefirst storage circuit is held in the second storage circuit. At thistime, the first terminal and the second terminal of the third switch arein the non-conduction state by the third control signal. Note that thefirst terminal and the second terminal of each of the first switch andthe second switch may be in either the conduction state or thenon-conduction state.

(Operation of Stopping Supply of Power Supply Voltage)

After the above operation, the supply of the power supply voltage to thestorage element is stopped. Even after the supply of the power supplyvoltage to the storage element is stopped, the signal corresponding tothe data held in the first storage circuit is held by the firstcapacitor. Here, an n-channel enhancement (normally-off) transistorwhose leakage current (off-state current) is extremely low is used asthe first transistor, and a ground potential (0 V) continues to be inputto the gate of the first transistor when the supply of the power supplyvoltage to the storage element is stopped. Consequently, even after thesupply of the power supply voltage to the storage element is stopped,the first transistor can be kept in the off state. As a result, apotential held by the first capacitor can be held for a long time. Inthis manner, even after the supply of the power supply voltage to thestorage element is stopped, data is held.

(Operation of Restarting Supply of Power Supply Voltage)

After the supply of the power supply voltage to the storage element isrestarted, the first terminal and the second terminal of the secondswitch are brought into conduction and the first terminal and the secondterminal of the first switch are brought out of conduction by the secondcontrol signal. At this time, the first transistor remains off. Thefirst terminal and the second terminal of the third switch are in thenon-conduction state. Thus, a potential supplied to the second powersupply line at the time of supplying the power supply voltage is inputto the second terminal of the first switch and the first terminal of thesecond switch. Therefore, the potential of each of the second terminalof the first switch and the first terminal of the second switch can beset to the potential of the second power supply line (hereinafter, thisoperation is referred to as pre-charge operation).

After the above pre-charge operation, the first terminal and the secondterminal of the first switch are brought into conduction and the firstterminal and the second terminal of the second switch are brought out ofconduction by the second control signal. At this time, the firsttransistor remains off. The first terminal and the second terminal ofthe third switch are in the non-conduction state. Consequently, thepotential of each of the second terminal of the first switch and thefirst terminal of the second switch is determined according to a signalheld in the first capacitor. That potential corresponds to either apotential supplied to the first power supply line at the time ofsupplying the power supply voltage or a potential supplied to the secondpower supply line at the time of supplying the power supply voltage.

After that, the first terminal and the second terminal of the thirdswitch are brought into conduction by the third control signal; thus, asignal corresponding to the potential of the second terminal of thefirst switch and the first terminal of the second switch or an invertedsignal thereof can be input to the first storage circuit. In thismanner, data which has been held before the supply of the power supplyvoltage to the storage element can be held in the first storage circuitagain.

The above is the driving method of the storage element.

(Signal Processing Circuit)

One embodiment of a storage device according to the present invention isa storage device including one or more storage elements described above.One embodiment of a signal processing circuit according to the presentinvention is a signal processing circuit including the storage device.For example, the storage element is used for a storage device such as aregister or a cache memory included in the signal processing circuit.

Further, the signal processing circuit may include some kinds of logiccircuits such as an arithmetic circuit which transmits/receives datato/from the storage device in addition to the storage device. Not onlythe supply of the power supply voltage to the storage device but alsothe supply of the power supply voltage to the arithmetic circuit whichtransmits/receives data to/from the storage device may be stopped.

The storage device may have a switching element which controls thesupply of the power supply voltage to a storage element. In the casewhere the supply of the power supply voltage to the arithmetic circuitis stopped, the arithmetic circuit may include a switching element whichcontrols the supply of the power supply voltage.

In a period during which the power supply voltage is not supplied to thestorage element, data stored in the first storage circuit correspondingto a nonvolatile memory can be held by the first capacitor provided inthe second storage circuit.

The off-state current of a transistor in which a channel is formed in anoxide semiconductor layer is extremely low. For example, the off-statecurrent of a transistor in which a channel is formed in an oxidesemiconductor layer is significantly lower than that of a transistor inwhich a channel is formed in silicon having crystallinity. Thus, whensuch a transistor including an oxide semiconductor is used for the firsttransistor, a signal held in the first capacitor is held for a long timealso in a period during which the power supply voltage is not suppliedto the storage element. The storage element can accordingly hold thestored content (data) also in a period during which the supply of thepower supply voltage is stopped.

In the second storage circuit, a signal held by the first capacitor isinput to the gate of the second transistor. Therefore, after supply ofthe power supply voltage to the storage element is restarted, the signalheld by the first capacitor can be converted into the one correspondingto the state (the on state or the off state) of the second transistor tobe read from the second storage circuit. Consequently, an originalsignal can be accurately read even when a potential corresponding to thesignal held by the first capacitor fluctuates to some degree.

By applying such a storage element to a storage device such as aregister or a cache memory included in a signal processing circuit, datain the storage device can be prevented from being erased owing to thestop of the supply of the power supply voltage. Further, shortly afterthe supply of the power supply voltage is restarted, the storage elementcan return to the state before the power supply is stopped. Therefore,the power supply can be stopped even for a short time in the signalprocessing circuit or one or a plurality of logic circuits included inthe signal processing circuit. Accordingly, it is possible to provide asignal processing circuit whose power consumption can be suppressed anda driving method of the signal processing circuit whose powerconsumption can be suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a storage element.

FIG. 2 is a timing chart illustrating operation of a storage element.

FIGS. 3A and 3B each illustrate a structure of a storage device.

FIG. 4 is a block diagram of a signal processing circuit.

FIG. 5 is a block diagram of a CPU in which a storage device is used.

FIGS. 6A to 6D illustrate a manufacturing process of a storage element.

FIGS. 7A to 7C illustrate a manufacturing process of a storage element.

FIGS. 8A to 8C illustrate a manufacturing process of a storage element.

FIG. 9 is a cross-sectional view illustrating a structure of a storageelement.

FIGS. 10A to 10D are cross-sectional views each illustrating a structureof a transistor in which a channel is formed in an oxide semiconductorlayer.

FIG. 11 is a cross-sectional view illustrating a structure of a storagedevice.

FIG. 12 is a cross-sectional view illustrating a structure of a storagedevice.

FIG. 13 is a block diagram of a portable electronic device.

FIG. 14 is a block diagram of a memory circuit.

FIG. 15 is a block diagram of an e-book reader.

FIGS. 16A to 16E illustrate structures of oxide materials.

FIGS. 17A to 17C illustrate a structure of an oxide material.

FIGS. 18A to 18C illustrate a structure of an oxide material.

FIG. 19 shows gate voltage dependence of mobility obtained bycalculation.

FIGS. 20A to 20C each show gate voltage dependence of drain current andmobility obtained by calculation.

FIGS. 21A to 21C each show gate voltage dependence of drain current andmobility obtained by calculation.

FIGS. 22A to 22C each show gate voltage dependence of drain current andmobility obtained by calculation.

FIGS. 23A and 23B illustrate cross-sectional structures of transistorsused for calculation.

FIGS. 24A to 24C are graphs showing characteristics of transistors eachincluding an oxide semiconductor film.

FIGS. 25A and 25B are graphs showing V_(g)-I_(d) characteristics after aBT test of a transistor of Sample 1.

FIGS. 26A and 26B are graphs showing V_(g)-I_(d) characteristics after aBT test of a transistor of Sample 2.

FIG. 27 shows XRD spectra of Sample A and Sample B.

FIG. 28 is a graph showing a relation between off-state current andsubstrate temperature in measurement of a transistor.

FIG. 29 is a graph showing V_(g) dependence of I_(d) and field-effectmobility.

FIG. 30A is a graph showing a relation between threshold voltage andsubstrate temperature, and FIG. 30B is a graph showing a relationbetween field-effect mobility and substrate temperature.

FIGS. 31A and 31B illustrate a structure of a transistor.

FIGS. 32A and 32B illustrate a structure of a transistor.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that thepresent invention is not limited to the following description and it iseasily understood by those skilled in the art that the mode and detailscan be variously changed without departing from the spirit and scope ofthe present invention. Therefore, the present invention should not beinterpreted as being limited to the description in the followingembodiments.

Functions of a “source” and a “drain” are sometimes interchanged witheach other when a transistor of opposite polarity is used or when thedirection of current flow is changed in circuit operation, for example.Therefore, the terms “source” and “drain” can be used to denote thedrain and the source, respectively, in this specification.

Note that in this specification and the like, the term “electricallyconnected” includes the case where components are connected through an“object having any electric function”. There is no particular limitationon an “object having any electric function” as long as electric signalscan be transmitted and received between components that are connectedthrough the object. Examples of an “object having any electric function”are a switching element such as a transistor, a resistor, an inductor, acapacitor, and an element with a variety of functions as well as anelectrode and a wiring.

Even when a circuit diagram shows independent components as if they areelectrically connected to each other, there is actually a case where oneconductive film has functions of a plurality of components such as acase where part of a wiring also functions as an electrode. The“electrical connection” in this specification includes in its categorysuch a case where one conductive film has functions of a plurality ofcomponents.

In this specification and the like, the terms “over” and “below” do notnecessarily mean “directly on” and “directly below”, respectively, inthe description of a physical relationship between components. Forexample, the expression “a gate electrode over a gate insulating layer”can mean the case where there is an additional component between thegate insulating layer and the gate electrode.

Note that the position, size, range, or the like of each componentillustrated in drawings and the like is not accurately represented insome cases for easy understanding. Therefore, the disclosed invention isnot necessarily limited to the position, size, range, or the like asdisclosed in the drawings and the like.

The ordinal number such as “first”, “second”, and “third” are used inorder to avoid confusion among components.

Embodiment 1

A signal processing circuit includes a storage device. The storagedevice includes one or a plurality of storage elements which can store1-bit data.

Note that the signal processing circuit of the preset inventionincludes, in its category, a CPU, a large scale integrated circuit (LSI)such as a microprocessor, an image processing circuit, a digital signalprocessor (DSP), or a field programmable gate array (FPGA), and thelike.

(Structure of Storage Element)

FIG. 1 is an example of a circuit diagram of a storage element. Astorage element 100 includes a storage circuit 101, a storage circuit102, a switch 103, a switch 104, a switch 105, a phase-inversion element106, and a capacitor 107. The storage circuit 101 holds data only in aperiod during which a power supply voltage is supplied. The storagecircuit 102 includes a capacitor 108, a transistor 109, and a transistor110.

Note that the storage element 100 may further include another circuitelement such as a diode, a resistor, or an inductor, as needed.

The transistor 109 is a transistor in which a channel is formed in anoxide semiconductor layer. In FIG. 1, “OS” is written beside atransistor in order to indicate that the transistor 109 has a structurein which a channel is formed in an oxide semiconductor layer. Here, asthe transistor 109 in which the channel is formed in the oxidesemiconductor layer, an n-channel enhancement (normally-off) transistorwhose leakage current (off-state current) is extremely low is used. Whensupply of a power supply voltage to the storage element 100 is stopped,a ground potential (0 V) continues to be input to a gate of thetransistor 109; for example, the gate of the transistor 109 is groundedthrough a load such as a resistor.

FIG. 1 illustrates an example in which the switch 103 includes atransistor 113 having a conductivity type (e.g., an n-channeltransistor) and the switch 104 includes a transistor 114 having anotherconductivity type (e.g., a p-channel transistor). Here, a first terminalof the switch 103 corresponds to one of a source and a drain of thetransistor 113, a second terminal of the switch 103 corresponds to theother of the source and the drain of the transistor 113, and conductionor non-conduction between the first terminal and the second terminal ofthe switch 103 (i.e., an on state or an off state of the transistor 113)is selected in response to a control signal S2 input to a gate of thetransistor 113. A first terminal of the switch 104 corresponds to one ofa source and a drain of the transistor 114, a second terminal of theswitch 104 corresponds to the other of the source and the drain of thetransistor 114, and conduction or non-conduction between the firstterminal and the second terminal of the switch 104 (i.e., the on stateor the off state of the transistor 114) is selected by the controlsignal S2 input to a gate of the transistor 114.

One of a source and a drain of the transistor 109 is electricallyconnected to one of a pair of electrodes of the capacitor 108 and a gateof the transistor 110. Here, the connection portion is referred to as anode M2. One of a source and a drain of the transistor 110 iselectrically connected to a power supply line to which a potential V1 issupplied, and the other thereof is electrically connected to the firstterminal of the switch 103 (the one of the source and the drain of thetransistor 113). The second terminal of the switch 103 (the other of thesource and the drain of the transistor 113) is electrically connected tothe first terminal of the switch 104 (the one of the source and thedrain of the transistor 114). The second terminal of the switch 104 (theother of the source and the drain of the transistor 114) is electricallyconnected to a power supply line to which a potential V2 is supplied.The second terminal of the switch 103 (the other of the source and thedrain of the transistor 113), the first terminal of the switch 104 (theone of the source and the drain of the transistor 114), an inputterminal of the phase-inversion element 106, and one of a pair ofelectrodes of the capacitor 107 are electrically connected to eachother. Here, the connection portion is referred to as a node M1. Aconstant potential can be input to the other of the pair of electrodesof the capacitor 107; for example, a structure can be employed in whicha low power supply potential (a ground potential or the like) or a highpower supply potential is input. The other of the pair of electrodes ofthe capacitor 107 may be electrically connected to the power supply lineto which the potential V1 is supplied. A constant potential can be inputto the other of the pair of electrodes of the capacitor 108; forexample, a structure can be employed in which a low power supplypotential (a ground potential or the like) or a high power supplypotential is input. The other of the pair of electrode of the capacitor108 may be electrically connected to the power supply line to which thepotential V1 is supplied. FIG. 1 illustrates an example in which theother of the pair of electrodes of the capacitor 107 and the other ofthe pair of electrodes of the capacitor 108 are electrically connectedto the power supply line to which the potential V1 is supplied.

Note that the capacitor 107 is not necessarily provided as long as theparasitic capacitance of the transistor or the like is activelyutilized. The capacitor 108 is not necessarily provided as long as theparasitic capacitance of the transistor or the like is activelyutilized.

A control signal S1 is input to the gate of the transistor 109. As foreach of the switch 103 and the switch 104, a conduction state or anon-conduction state between the first terminal and the second terminalis selected by the control signal S2 which is different from the controlsignal S1. When the first terminal and the second terminal of one of theswitches are in the conduction state, the first terminal and the secondterminal of the other of the switches are in the non-conduction state.As for the switch 105, a conduction state or a non-conduction statebetween a first terminal and a second terminal is selected by a controlsignal S3 which is different from the control signal S1 and the controlsignal S2.

A signal corresponding to data held in the storage circuit 101 is inputto the other of the source and the drain of the transistor 109. FIG. 1illustrates an example in which a signal output from an output terminal(denoted as OUT in FIG. 1) of the storage circuit 101 is input to theother of the source and the drain of the transistor 109. The phase of asignal output from the second terminal of the switch 103 (the other ofthe source and the drain of the transistor 113) is inverted by thephase-inversion element 106, and the inverted signal is input to thestorage circuit 101 through the switch 105 in which the first terminaland the second terminal are in the conduction state by the controlsignal S3.

Note that FIG. 1 illustrates an example in which a signal output fromthe second terminal of the switch 103 (the other of the source and thedrain of the transistor 113) is input to an input terminal (denoted asIN in FIG. 1) of the storage circuit 101 through the phase-inversionelement 106 and the switch 105; however, one embodiment of the presentinvention is not limited thereto. A signal output from the secondterminal of the switch 103 (the other of the source and the drain of thetransistor 113) may be input to the storage circuit 101 withoutinverting the phase. For example, in the case where a node in which aninverted signal of a signal input from the input terminal is held isprovided in the storage circuit 101, a signal output from the secondterminal of the switch 103 (the other of the source and the drain of thetransistor 113) can be input to the node.

In FIG. 1, the storage element 100 is supplied with, as the power supplyvoltage, a voltage corresponding to a difference between the potentialV1 and the potential V2. The storage circuit 101 may be supplied with,as a power supply voltage, a voltage corresponding to a differencebetween the potential V1 and the potential V2. In a period during whichthe storage circuit 101 is not supplied with the power supply voltage,the difference between the potential V1 and the potential V2 can be(substantially) zero; for example, the potential V1 and the potential V2each can be a ground potential.

The switch 105 may include a transistor. The transistor may be either ann-channel transistor or a p-channel transistor. Alternatively, ann-channel transistor and a p-channel transistor may be used incombination. For example, an analog switch can be used as the switch105.

In FIG. 1, for the transistor 109, a transistor including two gates, oneof which is provided over the oxide semiconductor layer, and the otherof which is provided below the oxide semiconductor layer can be used.The control signal S1 can be input to one of the gates, and a controlsignal S4 can be input to the other of the gates. The control signal S4may be a signal having a constant potential. The constant potential maybe the potential V1 or the potential V2. Note that the two gatesprovided over and below the oxide semiconductor layer may beelectrically connected to each other so that the control signal S1 isinput. The threshold voltage of the transistor 109 can be controlled bya signal input to the other gate of the transistor 109. For example, theoff-state current of the transistor 109 can be further reduced.

In FIG. 1, a transistor in which a channel is formed in a layer or asubstrate including a semiconductor other than an oxide semiconductorcan be used for any of the transistors other than the transistor 109among the transistors used for the storage element 100; for example, atransistor in which a channel is formed in a silicon layer or a siliconsubstrate can be used. Alternatively, a transistor in which a channel isformed in an oxide semiconductor layer can be used for all thetransistors used for the storage element 100. Further alternatively, inthe storage element 100, a transistor in which a channel is formed in anoxide semiconductor layer can be included besides the transistor 109,and a transistor in which a channel is formed in a layer or a substrateincluding a semiconductor other than an oxide semiconductor can be usedfor the rest of the transistors.

For the oxide semiconductor layer, an In—Ga—Zn-based oxide semiconductormaterial can be used. A semiconductor other than an oxide semiconductorcan be used, such as amorphous silicon, microcrystalline silicon,polycrystalline silicon, single crystal silicon, amorphous germanium,microcrystalline germanium, polycrystalline germanium, or single crystalgermanium. The off-state current density of a transistor in which achannel is formed in a highly purified oxide semiconductor layer can beless than or equal to 100 zA/μm, preferably less than or equal to 10zA/μm, more preferably less than or equal to 1 zA/μm. Thus, theoff-state current of the transistor is extremely lower than that of thetransistor including silicon with crystallinity. As a result, when thetransistor 109 is off, the potential of the node M1, i.e., the potentialof the gate of the transistor 110 can be held for a long time.

A material which can realize off-state current characteristicsequivalent to those of the oxide semiconductor material, such as a widegap material like silicon carbide (more specifically, a semiconductormaterial whose energy gap Eg is larger than 3 eV) may be used instead ofthe oxide semiconductor material.

A structure can be employed in which the storage circuit 101 in FIG. 1includes a first phase-inversion element and a second phase-inversionelement, an input terminal of the first phase-inversion element iselectrically connected to an output terminal of the secondphase-inversion element, and an input terminal of the secondphase-inversion element is electrically connected to an output terminalof the first phase-inversion element. The first phase-inversion elementand the second phase-inversion element each output a signalcorresponding to an input signal only in a period during which the powersupply potential is supplied.

As the phase-inversion element, for example, an inverter, a clockedinverter, or the like can be used.

The above is the structure of the storage element 100. Next, a drivingmethod thereof will be described.

(Driving Method of Storage Element)

In the storage element 100, in the case where in order to reduce powerconsumption in data holding, after supply of the power supply voltage,the supply of the power supply voltage is stopped and then the powersupply voltage is supplied again, a driving method can be as follows.The driving method will be described with reference to a timing chart inFIG. 2. In the timing chart in FIG. 2, reference numeral 101 denotesdata held in the storage circuit 101, reference symbol S1 denotes thepotential of the control signal S1, reference symbol S2 denotes thepotential of the control signal S2, reference symbol S3 denotes thepotential of the control signal S3, reference symbol V1 denotes thepotential V1, and reference symbol V2 denotes the potential V2. When apotential difference V between the potential V1 and the potential V2 is0, the power supply voltage is not supplied. Reference symbol M1 denotesthe potential of the node M1, and reference symbol M2 denotes thepotential of the node M2.

In the driving method below, an example will be described where, in thecase of using an n-channel transistor for the switch 103 and a p-channeltransistor for the switch 104 in the structure illustrated in FIG. 1,the first terminal and the second terminal of the switch 103 are broughtinto conduction and the first terminal and the second terminal of theswitch 104 are brought out of conduction when the control signal S2 hasa high-level potential, and the first terminal and the second terminalof the switch 103 are brought out of conduction and the first terminaland the second terminal of the switch 104 are brought into conductionwhen the control signal S2 has a low-level potential. Further, in thisexample, the first terminal and the second terminal of the switch 105are brought into conduction when the control signal S3 has a high-levelpotential, and the first terminal and the second terminal of the switch105 are brought out of conduction when the control signal S3 has alow-level potential. Furthermore, in the case of using an n-channeltransistor for the transistor 109 in this example, the transistor 109 isturned on when the control signal S1 has a high-level potential and thetransistor 109 is turned off when the control signal S1 has a low-levelpotential.

However, a driving method according to one embodiment of the presentinvention is not limited to this, and in the following description, thepotential of each control signal can be determined so that the switch103, the switch 104, the switch 105, and the transistor 109 are in thesame state.

Further, in the following example, the potential V1 is a low powersupply potential (hereinafter, referred to as VSS) and the potential V2switches between a high power supply potential (hereinafter, referred toas VDD) and VSS. VSS can be set to, for example, a ground potential.Note that a driving method according to one embodiment of the presentinvention is not limited to this, and it is possible to employ astructure in which the potential V2 is VSS and the potential V1 switchesbetween VDD and VSS.

(Normal Operation)

The operation in Period 1 in FIG. 2 will be described. In Period 1, thepower supply voltage is supplied to the storage element 100. Here, thepotential V2 is VDD. In a period during which the power supply voltageis supplied to the storage element 100, data is held in the storagecircuit 101 (referred to as dataX in FIG. 2). At this time, the controlsignal S3 has a low-level potential so that the first terminal and thesecond terminal of the switch 105 are brought out of conduction. Notethat the first terminal and the second terminal of each of the switch103 and the switch 104 may be in either the conduction state or thenon-conduction state. That is, the control signal S2 may have either ahigh-level potential or a low-level potential (this state is expressedwith A in FIG. 2). Further, the transistor 109 may be either on or off.That is, the control signal S1 may have either a high-level potential ora low-level potential (this state is expressed with A in FIG. 2). InPeriod 1, the node M1 may have any potential (this state is expressedwith A in FIG. 2). In Period 1, the node M2 may have any potential (thisstate is expressed with A in FIG. 2). The operation in Period 1 isreferred to as normal operation.

(Operation Before Stop of Supply of Power Supply Voltage)

The operation in Period 2 in FIG. 2 will be described. Before supply ofthe power supply voltage to the storage element 100 is stopped, thecontrol signal S1 is set to a high-level potential so that thetransistor 109 is turned on. Thus, a signal corresponding to data heldin the storage circuit 101 (dataX) is input to the gate of thetransistor 110 through the transistor 109. The signal input to the gateof the transistor 110 is held by the capacitor 108. In this manner, thepotential of the node M2 becomes a signal potential corresponding to thedata held in the storage circuit 101 (this potential is expressed as VXin FIG. 2). After that, the control signal S1 is set to a low-levelpotential so that the transistor 109 is turned off.

Thus, a signal corresponding to the data held in the storage circuit 101is held in the storage circuit 102. Also in Period 2, the first terminaland the second terminal of the switch 105 remain in the non-conductionstate by the control signal S3. The first terminal and the secondterminal of each of the switch 103 and the switch 104 may be in eitherthe conduction state or the non-conduction state. That is, the controlsignal S2 may have either a high-level potential or a low-levelpotential (this state is expressed with A in FIG. 2). In Period 2, thenode M1 may have any potential (this state is expressed with A in FIG.2). The operation in Period 2 is referred to as operation before stop ofsupply of the power supply voltage.

(Operation of Stopping Supply of Power Supply Voltage)

The operation in Period 3 in FIG. 2 will be described. The operationbefore stop of supply of the power supply voltage is performed, andthen, the supply of the power supply voltage to the storage element 100is stopped at the beginning of Period 3. The potential V2 becomes VSS.When the supply of the power supply voltage is stopped, the data held inthe storage circuit 101 (dataX) is erased. However, even after thesupply of the power supply voltage to the storage element 100 isstopped, the signal potential (VX) corresponding to the data (dataX)held in the storage circuit 101 is held in the node M2 by the capacitor108. Here, as the transistor 109, a transistor in which a channel isformed in an oxide semiconductor layer is used. Here, an n-channelenhancement (normally-off) transistor whose leakage current (off-statecurrent) is extremely low is used as the transistor 109, and a groundpotential (0 V) continues to be input to the gate of the transistor 109when the supply of the power supply voltage to the storage element 100is stopped. Consequently, even after the supply of the power supplyvoltage to the storage element 100 is stopped, the transistor 109 can bekept in the off state. As a result, a potential held by the capacitor108 (the potential VX of the node M2) can be held for a long time. Inthis manner, even after the supply of the power supply voltage to thestorage element 100 is stopped, data (dataX) is held. Period 3corresponds to a period during which the supply of the power supplyvoltage to the storage element 100 is stopped.

(Operation of Restarting Supply of Power Supply Voltage)

The operation in Period 4 in FIG. 2 will be described. After the supplyof the power supply voltage to the storage element is restarted and thepotential V2 is set to VDD, the control signal S2 is set to a low-levelpotential; thus, the first terminal and the second terminal of theswitch 104 are brought into conduction and the first terminal and thesecond terminal of the switch 103 are brought out of conduction. At thistime, the control signal S1 is a low-level potential, and the transistor109 remains off. The control signal S3 is a low-level potential, andthus the first terminal and the second terminal of the switch 105 are inthe non-conduction state. In this manner, the potential V2 at the timeof supplying the power supply voltage, i.e., VDD is input to the secondterminal of the switch 103 and the first terminal of the switch 104.Therefore, the second terminal of the switch 103 and the first terminalof the switch 104 (the potential of the node M1) can be set to aconstant potential (e.g., VDD) (hereinafter, this operation is referredto as pre-charge operation). The potential of the node M1 is held by thecapacitor 107.

After the above pre-charge operation, in Period 5, the control signal S2is set to a high-level potential; thus, the first terminal and thesecond terminal of the switch 103 are brought into conduction and thefirst terminal and the second terminal of the switch 104 are brought outof conduction. At this time, the control signal S1 keeps having alow-level potential, and the transistor 109 remains off. The controlsignal S3 has a low-level potential, and thus the first terminal and thesecond terminal of the switch 105 are out of conduction. Depending on asignal held in the capacitor 108 (the potential VX of the node M2), theon state or the off state of the transistor 110 is selected, and thepotential of the second terminal of the switch 103 and the firstterminal of the switch 104, i.e., the potential of the node M1 isdetermined. In the case where the transistor 110 is on, the potential V1(e.g., VSS) is input to the node M1. On the other hand, in the casewhere the transistor 110 is off, the potential of the node M1 keepshaving a constant potential (e.g., VDD) which is determined by the abovepre-charge operation. In this manner, depending on the on state or theoff state of the transistor 110, the potential of the node M1 becomesVDD or VSS. For example, in the case where a signal held in the storagecircuit 101 is “1” and corresponds to a high-level signal (VDD), thepotential of the node M1 becomes a low-level potential (VSS)corresponding to a signal “0”. On the other hand, in the case where asignal held in the storage circuit 101 is “0” and corresponds to alow-level potential (VSS), the potential of the node M1 becomes ahigh-level potential (VDD) corresponding to a signal “1”. That is, aninverted signal of a signal held in the storage circuit 101 is held inthe node M1. This potential is denoted as VXb in FIG. 2. That is, asignal corresponding to the data (dataX) input from the storage circuit101 in Period 2 is converted into the potential of the node M1 (VXb).

After that, in Period 6, the control signal S3 is set to a high-levelpotential, so that the first terminal and the second terminal of theswitch 105 are brought into conduction. At this time, the control signalS2 keeps having a high-level potential. The control signal S1 keepshaving a low-level potential, and thus the transistor 109 remains off.Consequently, the phase of a signal corresponding to the potential ofthe second terminal of the switch 103 and the first terminal of theswitch 104 (the potential of the node M1 (VXb)) is inverted through thephase-inversion element 106, and this inverted signal can be input tothe storage circuit 101. In this manner, the data which has been heldbefore the stop of supplying the power supply voltage to the storageelement 100 (dataX) can be held in the storage circuit 101 again.

The potential of the node M1 is set to a constant potential (VDD in FIG.2) by the pre-charge operation in Period 4, and becomes the potentialVXb corresponding to the data (dataX) in Period 5. Since the pre-chargeoperation is performed, the time required for the potential of the nodeM1 to be set to the constant potential VXb can be shortened. In thismanner, the time required for the storage circuit 101 to hold originaldata again after the supply of the power supply voltage is restarted canbe shortened.

The above is the driving method of the storage element.

In the storage element and the driving method thereof according to oneembodiment of the present invention, in a period during which thestorage element 100 is not supplied with the power supply voltage, datastored in the storage circuit 101 corresponding to a nonvolatile memorycan be held by the capacitor 108 which is provided in the storagecircuit 102.

The off-state current of a transistor in which a channel is formed in anoxide semiconductor layer is extremely low. For example, the off-statecurrent of a transistor in which a channel is formed in an oxidesemiconductor layer is significantly lower than that of a transistor inwhich a channel is formed in silicon having crystallinity. Thus, whensuch a transistor including an oxide semiconductor is used for thetransistor 109, a signal held in the capacitor 108 is held for a longtime also in a period during which the power supply voltage is notsupplied to the storage element 100. The storage element 100 canaccordingly hold the stored content (data) also in a period during whichthe supply of the power supply voltage is stopped.

Since the switch 103 and the switch 104 are provided, the storageelement performs the above pre-charge operation; thus, the time requiredfor the storage circuit 101 to hold original data again after the supplyof the power supply voltage is restarted can be shortened.

In the storage circuit 102, a signal held by the capacitor 108 is inputto the gate of the transistor 110. Therefore, after supply of the powersupply voltage to the storage element 100 is restarted, the signal heldby the capacitor 108 can be converted into the one corresponding to thestate (the on state or the off state) of the transistor 110 to be readfrom the storage circuit 102. Consequently, an original signal can beaccurately read even when a potential corresponding to the signal heldby the capacitor 108 fluctuates to some degree.

By applying the above-described storage element 100 to a storage devicesuch as a register or a cache memory included in a signal processingcircuit, data in the storage device can be prevented from being erasedowing to the stop of the supply of the power supply voltage. Further,shortly after the supply of the power supply voltage is restarted, thestorage element can return to the state before the power supply isstopped. Therefore, the power supply can be stopped even for a shorttime in the signal processing circuit or one or a plurality of logiccircuits included in the signal processing circuit. Accordingly, it ispossible to provide a signal processing circuit whose power consumptioncan be suppressed and a driving method of the signal processing circuitwhose power consumption can be suppressed.

This embodiment can be implemented in combination with any of the otherembodiments.

Embodiment 2

In this embodiment, a structure of a storage device including aplurality of storage elements described in Embodiment 1 will bedescribed.

FIG. 3A illustrates a structural example of a storage device of thisembodiment. The storage device illustrated in FIG. 3A includes aswitching element 401 and a storage element group 403 including aplurality of storage elements 402. Specifically, as each of the storageelements 402, the storage element 100 whose structure is described inEmbodiment 1 can be used. Each of the storage elements 402 included inthe storage element group 403 is supplied with a high-level power supplypotential VDD through the switching element 401. Further, each of thestorage elements 402 included in the storage element group 403 issupplied with a potential of a signal IN and a low-level power supplypotential VSS.

In FIG. 3A, a transistor is used for the switching element 401, and theswitching of the transistor is controlled by a control signal Sig Asupplied to a gate electrode thereof.

Note that in FIG. 3A, a structure in which the switching element 401includes only one transistor is illustrated; however, the presentinvention is not limited to this structure. In one embodiment of thepresent invention, the switching element 401 may include a plurality oftransistors. In the case where the plurality of transistors which serveas switching elements are included in the switching element 401, theplurality of transistors may be electrically connected to each other inparallel, in series, or in combination of parallel connection and seriesconnection.

Although the switching element 401 controls the supply of the high-levelpower supply potential VDD to each of the storage elements 402 includedin the storage element group 403 in FIG. 3A, the switching element 401may control the supply of the low-level power supply potential VSS. InFIG. 3B, an example of a storage device in which each of the storageelements 402 included in the storage element group 403 is supplied withthe low-level power supply potential VSS through the switching element401 is illustrated. The supply of the low-level power supply potentialVSS to each of the storage elements 402 included in the storage elementgroup 403 can be controlled by the switching element 401.

This embodiment can be combined as appropriate with the aboveembodiment.

Embodiment 3

In this embodiment, a structure of a signal processing circuit includingthe storage device described in Embodiment 2 or the storage elementdescribed in Embodiment 1 will be described.

FIG. 4 illustrates an example of a signal processing circuit accordingto one embodiment of the present invention. The signal processingcircuit includes at least one or a plurality of arithmetic circuits andone or a plurality of storage devices. Specifically, a signal processingcircuit 150 illustrated in FIG. 4 includes an arithmetic circuit 151, anarithmetic circuit 152, a storage device 153, a storage device 154, astorage device 155, a control device 156, and a power supply controlcircuit 157.

The arithmetic circuits 151 and 152 each include, as well as a logiccircuit which carries out simple logic arithmetic processing, an adder,a multiplier, and various arithmetic circuits. The storage device 153functions as a register for temporarily holding data when the arithmeticprocessing is carried out in the arithmetic circuit 151. The storagedevice 154 functions as a register for temporarily holding data when thearithmetic processing is carried out in the arithmetic circuit 152.

In addition, the storage device 155 can be used as a main memory and canstore a program executed by the control device 156 as data or can storedata from the arithmetic circuit 151 and the arithmetic circuit 152.

The control device 156 is a circuit which collectively controlsoperations of the arithmetic circuit 151, the arithmetic circuit 152,the storage device 153, the storage device 154, and the storage device155 included in the signal processing circuit 150. Note that in FIG. 4,a structure in which the control device 156 is provided in the signalprocessing circuit 150 as a part thereof is illustrated, but the controldevice 156 may be provided outside the signal processing circuit 150.

By using the storage element described in Embodiment 1 or the storagedevice described in Embodiment 2 for the storage device 153, the storagedevice 154, and the storage device 155, data can be held even when thesupply of the power supply voltage to the storage device 153, thestorage device 154, and the storage device 155 is stopped. In the abovemanner, the supply of the power supply voltage to the entire signalprocessing circuit 150 can be stopped, whereby power consumption can besuppressed. Alternatively, the supply of the power supply voltage to oneor more of the storage device 153, the storage device 154, and thestorage device 155 can be stopped, whereby power consumption of thesignal processing circuit 150 can be suppressed. After the supply of thepower supply voltage is resumed, the storage element can return to thestate same as that before the supply of the power supply voltage isstopped in a short time.

In addition, as well as the supply of the power supply voltage to thestorage device, the supply of the power supply voltage to the controlcircuit or the arithmetic circuit which transmits/receives data to/fromthe storage device may be stopped. For example, when the arithmeticcircuit 151 and the storage device 153 are not operated, the supply ofthe power supply voltage to the arithmetic circuit 151 and the storagedevice 153 may be stopped.

In addition, the power supply control circuit 157 controls the level ofthe power supply voltage which is supplied to the arithmetic circuit151, the arithmetic circuit 152, the storage device 153, the storagedevice 154, the storage device 155, and the control device 156 includedin the signal processing circuit 150. Further, in the case where thesupply of the power supply voltage is stopped, a switching element forstopping the supply of the power supply voltage may be provided for thepower supply control circuit 157, or for each of the arithmetic circuit151, the arithmetic circuit 152, the storage device 153, the storagedevice 154, the storage device 155, and the control device 156. In thelatter case, the power supply control circuit 157 is not necessarilyprovided in the signal processing circuit according to the presentinvention.

A storage device which functions as a cache memory may be providedbetween the storage device 155 that is a main memory and each of thearithmetic circuit 151, the arithmetic circuit 152, and the controldevice 156. By providing the cache memory, low-speed access to the mainmemory can be reduced and the speed of the signal processing such asarithmetic processing can be higher. By applying the above-describedstorage element also to the storage device functioning as a cachememory, power consumption of the signal processing circuit 150 can besuppressed. After the supply of the power-supply voltage is resumed, thestorage element can return to the state same as that before the powersupply voltage is stopped in a short time.

This embodiment can be combined as appropriate with any of the aboveembodiments.

Embodiment 4

In this embodiment, a configuration of a CPU, which is one of signalprocessing circuits according to one embodiment of the presentinvention, will be described.

FIG. 5 illustrates a configuration of the CPU in this embodiment. TheCPU illustrated in FIG. 5 mainly includes an arithmetic logic unit (ALU)9901, an ALU controller 9902, an instruction decoder 9903, an interruptcontroller 9904, a timing controller 9905, a register 9906, a registercontroller 9907, a bus interface (Bus I/F) 9908, a rewritable ROM 9909,and a ROM interface (ROM I/F) 9920, over a substrate 9900. Further, theROM 9909 and the ROM I/F 9920 may be provided over different chips.Naturally, the CPU illustrated in FIG. 5 is only an example with asimplified configuration, and an actual CPU may employ a variety ofconfigurations depending on the application.

An instruction which is input to the CPU through the Bus I/F 9908 isinput to the instruction decoder 9903 and decoded therein, and then,input to the ALU controller 9902, the interrupt controller 9904, theregister controller 9907, and the timing controller 9905.

The ALU controller 9902, the interrupt controller 9904, the registercontroller 9907, and the timing controller 9905 perform various controlsbased on the decoded instruction. Specifically, the ALU controller 9902generates signals for controlling the drive of the ALU 9901. While theCPU is executing a program, the interrupt controller 9904 processes aninterrupt request from an external input/output device or a peripheralcircuit based on its priority or a mask state. The register controller9907 generates an address of the register 9906, and reads/writes datafrom/to the register 9906 depending on the state of the CPU.

The timing controller 9905 generates signals for controlling operationtimings of the ALU 9901, the ALU controller 9902, the instructiondecoder 9903, the interrupt controller 9904, and the register controller9907. For example, the timing controller 9905 is provided with aninternal clock generator for generating an internal clock signal CLK2 onthe basis of a reference clock signal CLK1, and supplies the clocksignal CLK2 to the above circuits.

In the CPU of this embodiment, a storage element having the structuredescribed in any of the above embodiments is provided in the register9906. The register controller 9907 determines, in response to aninstruction from the ALU 9901, whether data is held by the storagecircuit 101 or data is held by the storage circuit 102 in the storageelement in the register 9906. When holding data by the feedback loop ofthe phase-inversion element is selected, a power supply voltage issupplied to the storage element in the register 9906. When holding datain the capacitor is selected, the supply of the power supply voltage tothe storage element in the register 9906 can be stopped. The powersupply can be stopped by providing a switching element between a storageelement group and a node to which the power supply potential VDD or thepower supply potential VSS is supplied, as illustrated in FIG. 3A orFIG. 3B.

In such a manner, even in the case where the operation of the CPU istemporarily stopped and the supply of the power supply voltage isstopped, data can be held and power consumption can be reduced.Specifically, for example, while a user of a personal computer does notinput data to an input device such as a keyboard, the operation of theCPU can be stopped, so that the power consumption can be reduced.

Although the example of the CPU is described in this embodiment, thesignal processing circuit according to one embodiment of the presentinvention is not limited to the CPU and can be applied to an LSI such asa microprocessor, an image processing circuit, a digital signalprocessor (DSP), or a field programmable gate array (FPGA).

This embodiment can be implemented in combination with any of the aboveembodiments.

Embodiment 5

Described in this embodiment is a manufacturing method of the storageelement 100 in FIG. 1 including the transistor 110 in which a channel isformed in silicon. Manufacturing methods of the transistor 110, thetransistor 109 in which a channel is formed in an oxide semiconductorlayer, and the capacitor 108 will be described as examples for theexplanation of the manufacturing method of the storage element 100. Notethat other elements included in the storage element 100 can bemanufactured in a manner similar to that of the transistor 109, thetransistor 110, or the capacitor 108.

As illustrated in FIG. 6A, an insulating film 701 and a semiconductorfilm 702 that is separated from a single crystal semiconductor substrateare formed over a substrate 700.

Although there is no particular limitation on a material which can beused as the substrate 700, it is necessary that the material have atleast heat resistance high enough to withstand heat treatment to beperformed later. For example, a glass substrate formed by a fusionprocess or a float process, a quartz substrate, a semiconductorsubstrate, a ceramic substrate, or the like can be used as the substrate700. In the case where a glass substrate is used and the temperature atwhich the heat treatment is to be performed later is high, a glasssubstrate whose strain point is higher than or equal to 730° C. ispreferably used.

In this embodiment, an example in which the semiconductor film 702 isformed using single crystal silicon is given as a manufacturing methodof the transistor 110. Note that a specific example of a forming methodof the single crystal semiconductor film 702 is briefly described.First, an ion beam including ions which are accelerated by an electricfield enters a bond substrate which is the single crystal semiconductorsubstrate and a fragile layer which is fragile because of local disorderof the crystal structure is formed in a region at a certain depth from asurface of the bond substrate. The depth at which the fragile layer isformed can be adjusted by the acceleration energy of the ion beam andthe angle at which the ion beam enters. Then, the bond substrate and thesubstrate 700 which is provided with the insulating film 701 areattached to each other so that the insulating film 701 is sandwichedtherebetween. After the bond substrate and the substrate 700 overlapwith each other, a pressure of approximately 1 N/cm² to 500 N/cm²,preferably 11 N/cm² to 20 N/cm² is applied to part of the bond substrateand part of the substrate 700 so that the substrates are attached toeach other. When the pressure is applied, bonding between the bondsubstrate and the insulating film 701 starts from the portion, whichresults in bonding of the entire surface where the bond substrate andthe insulating film 701 are in close contact with each other.Subsequently, heat treatment is performed, whereby microvoids that existin the fragile layer are combined, so that the microvoids increase involume. Accordingly, a single crystal semiconductor film which is partof the bond substrate is separated from the bond substrate along thefragile layer. The heat treatment is performed at a temperature notexceeding the strain point of the substrate 700.

Note that although an example in which the single crystal semiconductorfilm 702 is used is described in this embodiment, the present inventionis not limited to this structure. For example, a polycrystalline,microcrystalline, or amorphous semiconductor film which is formed overthe insulating film 701 by vapor deposition may be used. Alternatively,the semiconductor film may be crystallized by a known technique. As theknown technique of crystallization, a laser crystallization method usinga laser beam and a crystallization method using a catalytic element aregiven. Alternatively, a crystallization method using a catalytic elementand a laser crystallization method may be combined. In the case of usinga heat-resistant substrate such as a quartz substrate, it is possible tocombine any of the following crystallization methods: a thermalcrystallization method using an electrically heated oven, a lamp heatingcrystallization method using infrared light, a crystallization methodusing a catalytic element, and a high-temperature heating method atapproximately 950° C.

Next, as illustrated in FIG. 6B, a gate insulating film 703 is formedover the semiconductor film 702.

The gate insulating film 703 can be formed by oxidation or nitridationof a surface of the semiconductor film 702 by high-density plasmatreatment, heat treatment, or the like. The high-density plasmatreatment is performed using, for example, a mixed gas of a rare gassuch as He, Ar, Kr, or Xe, and oxygen, nitrogen oxide, ammonia,nitrogen, hydrogen, or the like. In that case, when plasma is excited byintroduction of microwaves, plasma with a low electron temperature andhigh density can be generated. By oxidation or nitridation of thesurface of the semiconductor film with oxygen radicals (including OHradicals in some cases) or nitrogen radicals (including NH radicals insome cases) generated by such high-density plasma, an insulating filmwith a thickness of 1 nm to 20 nm, preferably 5 nm to 10 nm can beformed so as to be in contact with the semiconductor film. For example,nitrous oxide (N₂O) is diluted with Ar by 1 time to 3 times (flow rate)and a microwave (2.45 GHz) electric power of 3 kW to 5 kW is appliedwith a pressure of 10 Pa to 30 Pa so that the oxidation or nitridationof the surface of the semiconductor film 702 is performed. By thistreatment, an insulating film having a thickness of 1 nm to 10 nm(preferably 2 nm to 6 nm) is formed. Further, nitrous oxide (N₂O) andsilane (SiH₄) are introduced and a microwave (2.45 GHz) electric powerof 3 kW to 5 kW is applied with a pressure of 10 Pa to 30 Pa so that asilicon oxynitride film is formed by vapor deposition, whereby a gateinsulating film is formed. With a combination of a solid-phase reactionand a reaction by vapor deposition, the gate insulating film with lowinterface state density and excellent withstand voltage can be formed.

The oxidation or nitridation of the semiconductor film by thehigh-density plasma treatment proceeds by a solid-phase reaction. Thus,the interface state density between the gate insulating film 703 and thesemiconductor film 702 can be extremely low. Further, the semiconductorfilm 702 is directly oxidized or nitrided by the high-density plasmatreatment, whereby a variation in thickness of the insulating film to beformed can be suppressed. Moreover, in the case where the semiconductorfilm has crystallinity, the surface of the semiconductor film isoxidized by the solid state reaction through the high-density plasmatreatment, whereby rapid oxidation only at crystal grain boundaries canbe suppressed and the gate insulating film with favorable uniformity andlow interface state density can be formed. A transistor in which theinsulating film formed by the high-density plasma treatment is used aspart of the gate insulating film or as the whole gate insulating filmcan have less variation in characteristics.

The gate insulating film 703 may be formed using a single layer or astack of layers using silicon oxide, silicon nitride oxide, siliconoxynitride, silicon nitride, hafnium oxide, aluminum oxide, tantalumoxide, yttrium oxide, hafnium silicate (HfSi_(x)O_(y), (x>0, y>0)),hafnium silicate (HfSi_(x)O_(y) (x>0, y>0)) to which nitrogen is added,hafnium aluminate (HfAl_(x)O_(y), (x>0, y>0)) to which nitrogen isadded, or the like by a plasma CVD method, a sputtering method, or thelike.

In this specification, an oxynitride refers to a substance in which theamount of oxygen is larger than that of nitrogen, and a nitride oxiderefers to a substance in which the amount of nitrogen is larger thanthat of oxygen.

The thickness of the gate insulating film 703 can be, for example,greater than or equal to 1 nm and less than or equal to 100 nm,preferably greater than or equal to 10 nm and less than or equal to 50nm. In this embodiment, a single-layer insulating film containingsilicon oxide is formed as the gate insulating film 703 by a plasma CVDmethod.

Next, as illustrated in FIG. 6B, a mask 705 is formed over the gateinsulating film 703. Then, as illustrated in FIG. 6C, an etching processis performed using the mask 705, whereby a semiconductor layer 772 and agate insulating layer 773 are formed.

In order to control the threshold voltage, an impurity element impartingp-type conductivity, such as boron, aluminum, or gallium, or an impurityelement imparting n-type conductivity, such as phosphorus or arsenic,may be added to the semiconductor layer 772. In order to control thethreshold voltage, the impurity element may be added to thesemiconductor film 702 which has not been subjected to the etchingprocess or the semiconductor layer 772 which is formed through theetching process. Alternatively, in order to control the thresholdvoltage, the impurity element may be added to the bond substrate.Further alternatively, the impurity element may be added to the bondsubstrate in order to roughly control the threshold voltage, and theimpurity element may be further added to the semiconductor film 702which has not been subjected to the etching process or the semiconductorlayer 772 which is formed through the etching process in order to finelycontrol the threshold voltage.

Next, the mask 705 is removed, and then a gate electrode 707 is formedas illustrated in FIG. 6C.

The gate electrode 707 can be formed in such a manner that a conductivefilm is formed, and then the conductive film is processed by etchinginto a desired shape. The conductive film can be formed by a CVD method,a sputtering method, an evaporation method, a spin coating method, orthe like. For the conductive film, tantalum (Ta), tungsten (W), titanium(Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr),niobium (Nb), or the like can be used. An alloy containing any of theaforementioned metals as its main component or a compound containing anyof the aforementioned metals may be used. Alternatively, the conductivefilm may be formed using a semiconductor such as polycrystalline silicondoped with an impurity element such as phosphorus which impartsconductivity to the semiconductor film.

Note that although the gate electrode 707 is formed of a single-layerconductive film in this embodiment, this embodiment is not limited tothis structure. The gate electrode 707 may be formed of a plurality ofstacked conductive films.

As a combination of two conductive films, tantalum nitride or tantalumcan be used for a first conductive film and tungsten can be used for asecond conductive film. Moreover, the following combinations are given:tungsten nitride and tungsten, molybdenum nitride and molybdenum,aluminum and tantalum, aluminum and titanium, and the like. Sincetungsten and tantalum nitride have high heat resistance, heat treatmentfor thermal activation can be performed after the two conductive filmsare formed. Alternatively, as the combination of the two conductivefilms, for example, nickel silicide and silicon doped with an impurityelement imparting n-type conductivity, tungsten silicide and silicondoped with an impurity element imparting n-type conductivity, or thelike can be used.

In the case of a three-layer structure in which three or more conductivefilms are stacked, a layered structure of a molybdenum film, an aluminumfilm, and a molybdenum film is preferably used.

Further, a light-transmitting oxide conductive film of indium oxide,indium oxide-tin oxide, indium oxide-zinc oxide, zinc oxide, zincaluminum oxide, zinc aluminum oxynitride, zinc gallium oxide, or thelike can be used as the gate electrode 707.

Alternatively, the gate electrode 707 may be selectively formed by adroplet discharge method without using a mask. A droplet dischargemethod is a method for forming a predetermined pattern by discharge orejection of a droplet containing a predetermined composition from anorifice, and includes an inkjet method in its category.

The gate electrode 707 can be formed in such a manner that theconductive film is etched into a desired tapered shape by an inductivelycoupled plasma (ICP) etching method in which the etching condition(e.g., the amount of electric power applied to a coil-shaped electrodelayer, the amount of electric power applied to an electrode layer on thesubstrate side, and the electrode temperature on the substrate side) iscontrolled as appropriate. In addition, angles and the like of thetapered shapes may also be controlled by the shape of a mask. Note thatas an etching gas, a chlorine-based gas such as chlorine, boronchloride, silicon chloride, or carbon tetrachloride; a fluorine-basedgas such as carbon tetrafluoride, sulfur fluoride, or nitrogen fluoride;or oxygen can be used as appropriate.

Next, an impurity element imparting one conductivity type is added tothe semiconductor layer 772 with the use of the gate electrode 707 as amask, whereby a channel formation region 710 which overlaps with thegate electrode 707 and a pair of impurity regions 709 with the channelformation region 710 interposed therebetween are formed in thesemiconductor layer 772 as illustrated in FIG. 6D.

In this embodiment, the case where an impurity element imparting p-typeconductivity (e.g., boron) is added to the semiconductor layer 772 isdescribed as an example.

Next, as illustrated in FIG. 7A, insulating films 712 and 713 are formedso as to cover the gate insulating layer 773 and the gate electrode 707.Specifically, an inorganic insulating film of silicon oxide, siliconnitride, silicon nitride oxide, silicon oxynitride, aluminum nitride,aluminum nitride oxide, or the like can be used as the insulating films712 and 713. In particular, a material with a low dielectric constant (alow-k material) is preferably used for the insulating films 712 and 713,because capacitance due to overlap of electrodes or wirings can besufficiently reduced. Note that a porous insulating film including sucha material may be employed as the insulating films 712 and 713. A porousinsulating film has a lower dielectric constant than an insulating filmwith high density, and thus allows a further reduction in parasiticcapacitance generated by electrodes or wirings.

In this embodiment, an example in which silicon oxynitride is used forthe insulating film 712 and silicon nitride oxide is used for theinsulating film 713 is described. In addition, an example in which theinsulating films 712 and 713 are formed over the gate electrode 707 isdescribed in this embodiment; however, in the present invention, onlyone insulating film may be formed over the gate electrode 707 or aplurality of insulating films of three or more layers may be stacked.

Next, as illustrated in FIG. 7B, the insulating films 712 and 713 aresubjected to chemical mechanical polishing (CMP) or etching, so that asurface of the gate electrode 707 is exposed. Note that in order toimprove the characteristics of the transistor 109 which is formed later,surfaces of the insulating films 712 and 713 are preferably flattened asmuch as possible.

Through the above steps, the transistor 110 can be formed.

Next, a method for manufacturing the transistor 109 is described. First,as illustrated in FIG. 7C, an oxide semiconductor layer 716 is formedover the insulating film 712 or the insulating film 713.

The oxide semiconductor layer 716 can be formed by processing an oxidesemiconductor film formed over the gate insulating films 712 and 713into a desired shape. The thickness of the oxide semiconductor film isgreater than or equal to 2 nm and less than or equal to 200 nm,preferably greater than or equal to 3 nm and less than or equal to 50nm, further preferably greater than or equal to 3 nm and less than orequal to 20 nm. The oxide semiconductor film is formed by a sputteringmethod using an oxide semiconductor target. Moreover, the oxidesemiconductor film can be formed by a sputtering method under a rare gas(e.g., argon) atmosphere, an oxygen atmosphere, or a mixed atmosphere ofa rare gas (e.g., argon) and oxygen.

Note that before the oxide semiconductor film is formed by a sputteringmethod, dust on surfaces of the insulating films 712 and 713 ispreferably removed by reverse sputtering in which an argon gas isintroduced and plasma is generated. The reverse sputtering refers to amethod in which, without application of voltage to a target side, an RFpower source is used for application of voltage to a substrate side inan argon atmosphere to generate plasma in the vicinity of the substrateto modify a surface. Note that instead of an argon atmosphere, anitrogen atmosphere, a helium atmosphere, or the like may be used.Alternatively, an argon atmosphere to which oxygen, nitrous oxide, orthe like is added may be used. Alternatively, an argon atmosphere towhich chlorine, carbon tetrafluoride, or the like is added may be used.

A material (an oxide semiconductor) used for the oxide semiconductorfilm preferably contains at least indium (In) or zinc (Zn). Inparticular, In and Zn are preferably contained. As a stabilizer forreducing a variation in electrical characteristics among transistorsincluding the oxide semiconductor film, gallium (Ga) is also preferablycontained. Tin (Sn) is preferably contained as a stabilizer. Hafnium(Hf) is preferably contained as a stabilizer. Aluminum (Al) ispreferably contained as a stabilizer.

As another stabilizer, one or plural kinds of lanthanoid such aslanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy),holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium(Lu) may be contained.

As the oxide semiconductor, for example, an indium oxide, a tin oxide, azinc oxide, a two-component metal oxide such as an In—Zn-based oxide, aSn—Zn-based oxide, an Al—Zn-based oxide, a Zn—Mg-based oxide, aSn—Mg-based oxide, an In—Mg-based oxide, or an In—Ga-based oxide, athree-component metal oxide such as an In—Ga—Zn-based oxide (alsoreferred to as IGZO), an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide,a Sn—Ga—Zn-based oxide, an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide,an In—Hf—Zn-based oxide, an In—La—Zn-based oxide, an In—Ce—Zn-basedoxide, an In—Pr—Zn-based oxide, an In—Nd—Zn-based oxide, anIn—Sm—Zn-based oxide, an In—Eu—Zn-based oxide, an In—Gd—Zn-based oxide,an In—Tb—Zn-based oxide, an In—Dy—Zn-based oxide, an In—Ho—Zn-basedoxide, an In—Er—Zn-based oxide, an In—Tm—Zn-based oxide, anIn—Yb—Zn-based oxide, or an In—Lu—Zn-based oxide, a four-component metaloxide such as an In—Sn—Ga—Zn-based oxide, an In—Hf—Ga—Zn-based oxide, anIn—Al—Ga—Zn-based oxide, an In—Sn—Al—Zn-based oxide, anIn—Sn—Hf—Zn-based oxide, or an In—Hf—Al—Zn-based oxide can be used.

Note that here, for example, an In—Ga—Zn-based oxide means an oxidecontaining In, Ga, and Zn, and there is no limitation on the ratio ofIn:Ga:Zn. Further, the In—Ga—Zn-based oxide may contain a metal elementother than In, Ga, and Zn.

Alternatively, a material represented by InMO₃(ZnO)_(m) (m>0, m is notan integer) may be used as the oxide semiconductor. Note that Mrepresents one or more metal elements selected from Ga, Fe, Mn, and Co.Alternatively, as the oxide semiconductor, a material represented byIn₃SnO₅(ZnO), (n>0, n is an integer) may be used.

For example, an In—Ga—Zn-based oxide with an atomic ratio ofIn:Ga:Zn=1:1:1 (=1/3:1/3:1/3) or In:Ga:Zn=2:2:1 (=2/5:2/5:1/5), or anyof oxides whose composition is in the neighborhood of the abovecompositions can be used. Alternatively, an In—Sn—Zn-based oxide with anatomic ratio of In:Sn:Zn=1:1:1 (=1/3:1/3:1/3), In:Sn:Zn=2:1:3(=1/3:1/6:1/2), or In:Sn:Zn=2:1:5 (=1/4:1/8:5/8), or any of oxides whosecomposition is in the neighborhood of the above compositions may beused.

However, the composition is not limited to those described above, and amaterial having an appropriate composition may be used depending onnecessary semiconductor characteristics (such as mobility, thresholdvoltage, and variation). In order to obtain necessary semiconductorcharacteristics, it is preferable that the carrier concentration, theimpurity concentration, the defect density, the atomic ratio of a metalelement to oxygen, the interatomic distance, the density, and the likebe set to appropriate values.

Note that for example, the expression “the composition of an oxidecontaining In, Ga, and Zn at the atomic ratio, In:Ga:Zn=a:b:c (a+b+c=1),is in the neighborhood of the composition of an oxide containing In, Ga,and Zn at the atomic ratio, In:Ga:Zn=A:B:C (A+B+C=1)” means that a, b,and c satisfy the following relation: (a−A)²+(b−B)²+(c−C)²≦r², and r maybe 0.05, for example. The same applies to other oxides.

The oxide semiconductor film may be either amorphous or crystalline.

In an oxide semiconductor in an amorphous state, a flat surface can beobtained with relative ease, so that when a transistor is manufacturedwith the use of the oxide semiconductor with an amorphous structure,interface scattering can be reduced, and relatively high mobility can beobtained with relative ease.

In an oxide semiconductor having crystallinity, defects in a bulk can befurther reduced and when a surface flatness is improved, and mobilityhigher than that of an oxide semiconductor in an amorphous state can beobtained. In order to improve the surface flatness, the oxidesemiconductor is preferably formed on a flat surface. Specifically, theoxide semiconductor may be formed on a surface with an average surfaceroughness (R_(a)) of 1 nm or less, preferably 0.3 nm or less, morepreferably 0.1 nm or less.

Note that the average surface roughness (R_(a)) is obtained byexpanding, into three dimensions, center line average roughness that isdefined by JIS B 0601 so as to be applied to a surface. R_(a) can beexpressed as an “average value of the absolute values of deviations froma reference surface to a designated surface” and is defined by thefollowing formula.

$\begin{matrix}{{Ra} = {\frac{1}{S_{0}}{\int_{y_{1}}^{y_{2}}{\int_{x_{1}}^{x_{2}}{{{{f\left( {x,y} \right)} - Z_{0}}\ }{x}\ {y}}}}}} & \left\lbrack {{FORMULA}\mspace{14mu} 1} \right\rbrack\end{matrix}$

In the above formula, S₀ represents the area of a plane to be measured(a rectangular region which is defined by four points represented bycoordinates (x₁, y₁), (x₁, y₂), (y₂, y₁), and (x₂, y₂)), and Z₀represents the average height of the plane to be measured. R_(a) can bemeasured using an atomic force microscope (AFM).

In this embodiment, as the oxide semiconductor film, an In—Ga—Zn-basedoxide semiconductor thin film with a thickness of 30 nm, which isobtained by a sputtering method using a target containing indium (In),gallium (Ga), and zinc (Zn), is used. As the target, a target having acomposition ratio of In:Ga:Zn=1:1:0.5, In:Ga:Zn=1:1:1, or In:Ga:Zn=1:1:2can be used, for example. The filling rate of the target containing In,Ga, and Zn is greater than or equal to 90% and less than or equal to100%, preferably greater than or equal to 95% and less than 100%. Withthe use of the target with high filling rate, a dense oxidesemiconductor film is formed.

In this embodiment, the oxide semiconductor film is formed in such amanner that the substrate is held in a treatment chamber kept at reducedpressure, a sputtering gas from which hydrogen and moisture are removedis introduced into the treatment chamber while remaining moisturetherein is removed, and the above target is used. The substratetemperature in film formation may be higher than or equal to 100° C. andlower than or equal to 600° C., preferably higher than or equal to 200°C. and lower than or equal to 400° C. By forming the oxide semiconductorfilm in a state where the substrate is heated, the concentration ofimpurities included in the formed oxide semiconductor film can bereduced. In addition, damage by sputtering can be reduced. In order toremove remaining moisture in the treatment chamber, an entrapment vacuumpump is preferably used. For example, a cryopump, an ion pump, or atitanium sublimation pump is preferably used. The evacuation unit may bea turbo pump provided with a cold trap. In the treatment chamber whichis evacuated with the cryopump, for example, a hydrogen atom, a compoundcontaining a hydrogen atom, such as water (H₂O), (more preferably, alsoa compound containing a carbon atom), and the like are removed, wherebythe impurity concentration in the oxide semiconductor film formed in thetreatment chamber can be reduced.

As one example of the film formation condition, the distance between thesubstrate and the target is 100 mm, the pressure is 0.6 Pa, thedirect-current (DC) power source is 0.5 kW, and the atmosphere is anoxygen atmosphere (the proportion of the oxygen flow rate is 100%). Notethat a pulsed direct-current (DC) power source is preferable becausedust generated in film formation can be reduced and the film thicknesscan be made uniform.

When the leakage rate of the treatment chamber of the sputteringapparatus is set to 1×10⁻¹⁰ Pa·m³/s or less, entry of impurities such asan alkali metal and hydride into the oxide semiconductor film that isbeing deposited by sputtering can be reduced. Further, with the use ofthe above entrapment vacuum pump as an evacuation system, counter flowof impurities such as alkali metal, a hydrogen atom, a hydrogenmolecule, water, a hydroxyl group, and hydride from the evacuationsystem can be reduced.

When the purity of the target is set to 99.99% or higher, alkali metal,a hydrogen atom, a hydrogen molecule, water, a hydroxyl group, hydride,or the like entering the oxide semiconductor film can be reduced. Inaddition, when the target is used, the concentration of alkali metalsuch as lithium, sodium, or potassium can be reduced in the oxidesemiconductor film.

In order that the oxide semiconductor film contains as little hydrogen,a hydroxyl group, and moisture as possible, it is preferable thatimpurities adsorbed on the substrate 700, such as moisture and hydrogen,be eliminated and removed by preheating the substrate 700, over whichfilms up to the insulating films 712 and 713 are formed, in a preheatingchamber of a sputtering apparatus, as a pretreatment for film formation.The temperature for the preheating is higher than or equal to 100° C.and lower than or equal to 400° C., preferably higher than or equal to150° C. and lower than or equal to 300° C. As an evacuation unitprovided in the preheating chamber, a cryopump is preferable. Note thatthis preheating treatment can be omitted. This preheating may besimilarly performed on the substrate 700 over which conductive films 719and 720 are formed before the formation of a gate insulating film 721.

Note that etching for forming the oxide semiconductor layer 716 may bedry etching, wet etching, or both dry etching and wet etching. As anetching gas for dry etching, a gas containing chlorine (a chlorine-basedgas such as chlorine (Cl₂), boron trichloride (BCl₃), silicontetrachloride (SiCl₄), or carbon tetrachloride (CCl₄)) is preferablyused. Moreover, a gas containing fluorine (a fluorine-based gas such ascarbon tetrafluoride (CF₄), sulfur hexafluoride (SF₆), nitrogentrifluoride (NF₃), or trifluoromethane (CHF₃)), hydrogen bromide (HBr),oxygen (O₂), any of these gases to which a rare gas such as helium (He)or argon (Ar) is added, or the like can be used.

As the dry etching method, a parallel plate RIE (reactive ion etching)method or an ICP (inductively coupled plasma) etching method can beused. In order to etch the film into a desired shape, the etchingcondition (the amount of electric power applied to a coiled electrode,the amount of electric power applied to an electrode on the substrateside, the electrode temperature on the substrate side, or the like) isadjusted as appropriate.

As an etchant used for the wet etching, a mixed solution of phosphoricacid, acetic acid, and nitric acid, or organic acid such as citric acidor oxalic acid can be used. In this embodiment, ITO-07N (produced byKANTO CHEMICAL CO., INC.) is used.

A resist mask used for forming the oxide semiconductor layer 716 may beformed by an inkjet method. Formation of the resist mask by an inkjetmethod needs no photomask; thus, manufacturing cost can be reduced.

Note that it is preferable that reverse sputtering be performed beforethe formation of a conductive film in a subsequent step to remove aresist residue or the like left over surfaces of the oxide semiconductorlayer 716 and the insulating films 712 and 713.

Note that, in some cases, the oxide semiconductor film formed bysputtering or the like contains a large amount of moisture or hydrogen(including a hydroxyl group) as impurities. Moisture and hydrogen easilyform a donor level and thus serve as impurities in the oxidesemiconductor. Therefore, in one embodiment of the present invention, inorder to reduce impurities such as moisture and hydrogen in the oxidesemiconductor film (dehydration or dehydrogenation), the oxidesemiconductor layer 716 is subjected to heat treatment in areduced-pressure atmosphere, an inert gas atmosphere of nitrogen, a raregas, or the like, an oxygen gas atmosphere, or an ultra dry airatmosphere (the moisture amount is 20 ppm (−55° C. by conversion into adew point) or less, preferably 1 ppm or less, further preferably 10 ppbor less, in the case where the measurement is performed by a dew pointmeter in a cavity ring down laser spectroscopy (CRDS) method).

By performing heat treatment on the oxide semiconductor layer 716,moisture or hydrogen in the oxide semiconductor layer 716 can beeliminated. Specifically, heat treatment may be performed at atemperature higher than or equal to 250° C. and lower than or equal to750° C., preferably higher than or equal to 400° C. and lower than thestrain point of the substrate. For example, heat treatment may beperformed at 500° C. for approximately 3 minutes to 6 minutes. When RTAis used for the heat treatment, dehydration or dehydrogenation can beperformed in a short time; thus, treatment can be performed even at atemperature higher than the strain point of a glass substrate.

In this embodiment, an electrical furnace that is one of heat treatmentapparatuses is used.

Note that the heat treatment apparatus is not limited to an electricfurnace, and may include a device for heating an object by heatconduction or heat radiation from a heating element such as a resistanceheating element. For example, a rapid thermal annealing (RTA) apparatussuch as a gas rapid thermal annealing (GRTA) apparatus or a lamp rapidthermal annealing (LRTA) apparatus can be used. An LRTA apparatus is anapparatus for heating an object by radiation of light (anelectromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressuresodium lamp, or a high-pressure mercury lamp. A GRTA apparatus is anapparatus for heat treatment using a high-temperature gas. As the gas,an inert gas that does not react with the object by heat treatment, forexample, nitrogen or a rare gas such as argon is used.

Note that it is preferable that in the heat treatment, moisture,hydrogen, or the like be not contained in nitrogen or a rare gas such ashelium, neon, or argon. It is preferable that the purity of nitrogen ora rare gas such as helium, neon, or argon which is introduced into theheat treatment apparatus be set to be 6N (99.9999%) or higher,preferably 7N (99.99999%) or higher (that is, the impurity concentrationis 1 ppm or less, preferably 0.1 ppm or less).

It has been pointed out that an oxide semiconductor is insensitive toimpurities, there is no problem even when a considerable amount of metalimpurities is contained in the film, and therefore, soda-lime glasswhich contains a large amount of alkali metal such as sodium and isinexpensive can also be used (Kamiya, Nomura, and Hosono, “CarrierTransport Properties and Electronic Structures of Amorphous OxideSemiconductors: The present status”, KOTAI BUTSURI (SOLID STATEPHYSICS), 2009, Vol. 44, pp. 621-633). However, this is not a properconsideration. Alkali metal is not an element included in an oxidesemiconductor, and therefore, is an impurity. Also, alkaline-earth metalis an impurity in the case where alkaline-earth metal is not an elementincluded in an oxide semiconductor. Alkali metal, in particular, Nabecomes Na⁺ when an insulating film in contact with the oxidesemiconductor layer is an oxide and Na diffuses into the insulatingfilm. Further, in the oxide semiconductor layer, Na cuts or enters abond between metal and oxygen which are included in the oxidesemiconductor. As a result, for example, deterioration ofcharacteristics of the transistor, such as a normally-on state of thetransistor due to shift of a threshold voltage in the negativedirection, or reduction in mobility, occurs. In addition, variation incharacteristics also occurs. Such deterioration of characteristics ofthe transistor and variation in characteristics due to the impurityremarkably appear when the hydrogen concentration in the oxidesemiconductor film is very low. Therefore, when the hydrogenconcentration in the oxide semiconductor layer is less than or equal to1×10¹⁸/cm³, preferably less than or equal to 1×10¹⁷/cm³, theconcentration of the above impurity is preferably reduced. Specifically,the Na concentration measured by secondary ion mass spectrometry ispreferably less than or equal to 5×10¹⁶/cm³, more preferably less thanor equal to 1×10¹⁶/cm³, still more preferably less than or equal to1×10¹⁵/cm³. In a similar manner, the measurement value of Liconcentration is preferably less than or equal to 5×10¹⁵/cm³, morepreferably less than or equal to 1×10¹⁵/cm³. In a similar manner, themeasurement value of K concentration is preferably less than or equal to5×10¹⁵/cm³, more preferably less than or equal to 1×10¹⁵/cm³.

Through the above steps, the hydrogen concentration in the oxidesemiconductor layer 716 can be reduced.

Note that the oxide semiconductor layer may be either amorphous orcrystalline. In the latter case, the oxide semiconductor layer may be asingle crystal oxide semiconductor layer or a polycrystalline oxidesemiconductor layer. Alternatively, the oxide semiconductor layer mayhave a partially crystalline structure, an amorphous structure includinga portion having crystallinity, or a non-amorphous structure. As theoxide semiconductor layer, for example, an oxide including a crystalwith c-axis alignment (also referred to as c-axis aligned crystal(CAAC)), which has a triangular or hexagonal atomic arrangement whenseen from the direction of an a-b plane, a surface, or an interface canbe used. In the crystal, metal atoms are arranged in a layered manner,or metal atoms and oxygen atoms are arranged in a layered manner alongthe c-axis, and the direction of the a-axis or the b-axis is varied inthe a-b plane (the crystal rotates around the c-axis).

Sputtering may be performed to form an oxide semiconductor film whichincludes an oxide including CAAC. In order to obtain CAAC by sputtering,it is important to form hexagonal crystals in an initial stage ofdeposition of an oxide semiconductor film and cause crystal growth fromthe hexagonal crystals as seeds. In order to achieve this, it ispreferable that the distance between the target and the substrate bemade longer (e.g., 150 mm to 200 mm) and the substrate heatingtemperature be 100° C. to 500° C., more preferably 200° C. to 400° C.,still preferably 250° C. to 300° C. In addition to this, the depositedoxide semiconductor film is subjected to heat treatment at a temperaturehigher than the substrate heating temperature in the deposition, so thatmicro-defects in the film and defects at the interface of a stackedlayer can be compensated.

In a broad sense, an oxide including CAAC means a non-single-crystaloxide including a phase which has a triangular, hexagonal, regulartriangular, or regular hexagonal atomic arrangement when seen from thedirection perpendicular to the a-b plane and in which metal atoms arearranged in a layered manner or metal atoms and oxygen atoms arearranged in a layered manner when seen from the direction perpendicularto the c-axis direction.

The CAAC is not a single crystal, but this does not mean that the CAACis composed of only an amorphous component. Although the CAAC includes acrystallized portion (crystalline portion), a boundary between onecrystalline portion and another crystalline portion is not clear in somecases.

In the case where oxygen is included in the CAAC, nitrogen may besubstituted for part of oxygen included in the CAAC. The c-axes ofindividual crystalline portions included in the CAAC may be aligned inone direction (e.g., a direction perpendicular to a surface of asubstrate over which the CAAC is formed or a surface of the CAAC).Alternatively, the normals of the a-b planes of the individualcrystalline portions included in the CAAC may be aligned in onedirection (e.g., a direction perpendicular to a surface of a substrateover which the CAAC is formed or a surface of the CAAC).

The CAAC becomes a conductor, a semiconductor, or an insulator dependingon its composition or the like. The CAAC transmits or does not transmitvisible light depending on its composition or the like.

As an example of such a CAAC, there is a crystal which is formed into afilm shape and has a triangular or hexagonal atomic arrangement whenobserved from the direction perpendicular to a surface of the film or asurface of a supporting substrate, and in which metal atoms are arrangedin a layered manner or metal atoms and oxygen atoms (or nitrogen atoms)are arranged in a layered manner when a cross section of the film isobserved.

An example of a crystal structure of the CAAC will be described indetail with reference to FIGS. 16A to 16E, FIGS. 17A to 17C, and FIGS.18A to 18C. In FIGS. 16A to 16E, FIGS. 17A to 17C, and FIGS. 18A to 18C,the vertical direction corresponds to the c-axis direction and a planeperpendicular to the c-axis direction corresponds to the a-b plane,unless otherwise specified. When the expressions “an upper half” and “alower half” are simply used, they refer to an upper half above the a-bplane and a lower half below the a-b plane (an upper half and a lowerhalf with respect to the a-b plane). Furthermore, in FIGS. 16A to 16E, Osurrounded by a circle represents tetracoordinate O and O surrounded bya double circle represents tricoordinate O.

FIG. 16A illustrates a structure including one hexacoordinate In atomand six tetracoordinate oxygen (hereinafter referred to astetracoordinate O) atoms proximate to the In atom. Here, a structureincluding one metal atom and oxygen atoms proximate thereto is referredto as a small group. The structure in FIG. 16A is actually an octahedralstructure, but is illustrated as a planar structure for simplicity. Notethat three tetracoordinate O atoms exist in each of an upper half and alower half in FIG. 16A. In the small group illustrated in FIG. 16A,electric charge is 0.

FIG. 16B illustrates a structure including one pentacoordinate Ga atom,three tricoordinate oxygen (hereinafter referred to as tricoordinate 0)atoms proximate to the Ga atom, and two tetracoordinate O atomsproximate to the Ga atom. All the tricoordinate O atoms exist on the a-bplane. One tetracoordinate O atom exists in each of an upper half and alower half in FIG. 16B. An In atom can also have the structureillustrated in FIG. 16B because an In atom can have five ligands. In thesmall group illustrated in FIG. 16B, electric charge is 0.

FIG. 16C illustrates a structure including one tetracoordinate Zn atomand four tetracoordinate O atoms proximate to the Zn atom. In FIG. 16C,one tetracoordinate O atom exists in an upper half and threetetracoordinate O atoms exist in a lower half. Alternatively, threetetracoordinate O atoms may exist in the upper half and onetetracoordinate O atom may exist in the lower half in FIG. 16C. In thesmall group illustrated in FIG. 16C, electric charge is 0.

FIG. 16D illustrates a structure including one hexacoordinate Sn atomand six tetracoordinate O atoms proximate to the Sn atom. In FIG. 16D,three tetracoordinate O atoms exist in each of an upper half and a lowerhalf. In the small group illustrated in FIG. 16D, electric charge is +1.

FIG. 16E illustrates a small group including two Zn atoms. In FIG. 16E,one tetracoordinate O atom exists in each of an upper half and a lowerhalf. In the small group illustrated in FIG. 16E, electric charge is −1.

Here, a plurality of small groups form a medium group, and a pluralityof medium groups form a large group (also referred to as a unit cell).

Now, a rule of bonding between the small groups will be described. Thethree O atoms in the upper half with respect to the hexacoordinate Inatom in FIG. 16A each have three proximate In atoms in the downwarddirection, and the three O atoms in the lower half each have threeproximate In atoms in the upward direction. The one O atom in the upperhalf with respect to the pentacoordinate Ga atom in FIG. 16B has oneproximate Ga atom in the downward direction, and the one O atom in thelower half has one proximate Ga atom in the upward direction. The one Oatom in the upper half with respect to the tetracoordinate Zn atom inFIG. 16C has one proximate Zn atom in the downward direction, and thethree O atoms in the lower half each have three proximate Zn atoms inthe upward direction. In this manner, the number of the tetracoordinateO atoms above the metal atom is equal to the number of the metal atomsproximate to and below each of the tetracoordinate O atoms. Similarly,the number of the tetracoordinate O atoms below the metal atom is equalto the number of the metal atoms proximate to and above each of thetetracoordinate O atoms. Since the coordination number of thetetracoordinate O atom is 4, the sum of the number of the metal atomsproximate to and below the O atom and the number of the metal atomsproximate to and above the O atom is 4. Accordingly, when the sum of thenumber of tetracoordinate O atoms above a metal atom and the number oftetracoordinate O atoms below another metal atom is 4, the two kinds ofsmall groups including the metal atoms can be bonded. For example, inthe case where the hexacoordinate metal (In or Sn) atom is bondedthrough three tetracoordinate O atoms in the lower half, it is bonded tothe pentacoordinate metal (Ga or In) atom or the tetracoordinate metal(Zn) atom.

A metal atom whose coordination number is 4, 5, or 6 is bonded toanother metal atom through a tetracoordinate O atom in the c-axisdirection. In addition to the above, a medium group can be formed in adifferent manner by combining a plurality of small groups so that thetotal electric charge of the layered structure is 0.

FIG. 17A illustrates a model of a medium group included in a layeredstructure of an In—Sn—Zn-based oxide. FIG. 17B illustrates a large groupincluding three medium groups. Note that FIG. 17C illustrates an atomicarrangement in the case where the layered structure in FIG. 17B isobserved from the c-axis direction.

In FIG. 17A, a tricoordinate O atom is omitted for simplicity, and atetracoordinate O atom is illustrated by a circle; the number in thecircle shows the number of tetracoordinate O atoms. For example, threetetracoordinate O atoms existing in each of an upper half and a lowerhalf with respect to a Sn atom are denoted by circled 3. Similarly, inFIG. 17A, one tetracoordinate O atom existing in each of an upper halfand a lower half with respect to an In atom is denoted by circled 1.FIG. 17A also illustrates a Zn atom proximate to one tetracoordinate Oatom in a lower half and three tetracoordinate O atoms in an upper half,and a Zn atom proximate to one tetracoordinate O atom in an upper halfand three tetracoordinate O atoms in a lower half.

In the medium group included in the layered structure of theIn—Sn—Zn-based oxide in FIG. 17A, in the order starting from the top, aSn atom proximate to three tetracoordinate O atoms in each of an upperhalf and a lower half is bonded to an In atom proximate to onetetracoordinate O atom in each of an upper half and a lower half, the Inatom is bonded to a Zn atom proximate to three tetracoordinate O atomsin an upper half, the Zn atom is bonded to an In atom proximate to threetetracoordinate O atoms in each of an upper half and a lower halfthrough one tetracoordinate O atom in a lower half with respect to theZn atom, the In atom is bonded to a small group that includes two Znatoms and is proximate to one tetracoordinate O atom in an upper half,and the small group is bonded to a Sn atom proximate to threetetracoordinate O atoms in each of an upper half and a lower halfthrough one tetracoordinate O atom in a lower half with respect to thesmall group. A plurality of such medium groups are bonded, so that alarge group is formed.

Here, electric charge for one bond of a tricoordinate O atom andelectric charge for one bond of a tetracoordinate O atom can be assumedto be −0.667 and −0.5, respectively. For example, electric charge of a(hexacoordinate or pentacoordinate) In atom, electric charge of a(tetracoordinate) Zn atom, and electric charge of a (pentacoordinate orhexacoordinate) Sn atom are +3, +2, and +4, respectively. Accordingly,electric charge in a small group including a Sn atom is +1. Therefore,electric charge of −1, which cancels +1, is needed to form a layeredstructure including a Sn atom. As a structure having electric charge of−1, the small group including two Zn atoms as illustrated in FIG. 16Ecan be given. For example, with one small group including two Zn atoms,electric charge of one small group including a Sn atom can be cancelled,so that the total electric charge of the layered structure can be 0.

When the large group illustrated in FIG. 17B is repeated, anIn—Sn—Zn-based oxide crystal (In₂SnZn₃O₈) can be obtained. Note that alayered structure of the obtained In—Sn—Zn-based oxide can be expressedas a composition formula, In₂SnZn₂O₇(ZnO)_(m) (m is 0 or a naturalnumber).

The above-described rule also applies to the following oxides: afour-component metal oxide such as an In—Sn—Ga—Zn-based oxide; athree-component metal oxide such as an In—Ga—Zn-based oxide (alsoreferred to as IGZO), an In—Al—Zn-based oxide, a Sn—Ga—Zn-based oxide,an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-basedoxide, an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, anIn—Pr—Zn-based oxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide,an In—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-basedoxide, an In—Dy—Zn-based oxide, an In—Ho—Zn-based oxide, anIn—Er—Zn-based oxide, an In—Tm—Zn-based oxide, an In—Yb—Zn-based oxide,or an In—Lu—Zn-based oxide; a two-component metal oxide such as anIn—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide, aZn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, or anIn—Ga-based oxide; and the like.

As an example, FIG. 18A illustrates a model of a medium group includedin a layered structure of an In—Ga—Zn-based oxide.

In the medium group included in the layered structure of theIn—Ga—Zn-based oxide in FIG. 18A, in the order starting from the top, anIn atom proximate to three tetracoordinate O atoms in each of an upperhalf and a lower half is bonded to a Zn atom proximate to onetetracoordinate O atom in an upper half, the Zn atom is bonded to a Gaatom proximate to one tetracoordinate O atom in each of an upper halfand a lower half through three tetracoordinate O atoms in a lower halfwith respect to the Zn atom, and the Ga atom is bonded to an In atomproximate to three tetracoordinate O atoms in each of an upper half anda lower half through one tetracoordinate O atom in a lower half withrespect to the Ga atom. A plurality of such medium groups are bonded, sothat a large group is formed.

FIG. 18B illustrates a large group including three medium groups. Notethat FIG. 18C illustrates an atomic arrangement in the case where thelayered structure in FIG. 18B is observed from the c-axis direction.

Here, since electric charge of a (hexacoordinate or pentacoordinate) Inatom, electric charge of a (tetracoordinate) Zn atom, and electriccharge of a (pentacoordinate) Ga atom are +3, +2, and +3, respectively,electric charge of a small group including any of an In atom, a Zn atom,and a Ga atom is 0. As a result, the total electric charge of a mediumgroup having a combination of such small groups is always 0.

In order to form the layered structure of the In—Ga—Zn-based oxide, alarge group can be formed using not only the medium group illustrated inFIG. 18A but also a medium group in which the arrangement of the Inatom, the Ga atom, and the Zn atom is different from that in FIG. 18A.

Next, as illustrated in FIG. 8A, the conductive film 719 which is incontact with the gate electrode 707 and the oxide semiconductor layer716, and the conductive film 720 which is in contact with the oxidesemiconductor layer 716 are formed. The conductive film 719 and theconductive film 720 function as a source and drain electrodes.

Specifically, the conductive film 719 and the conductive film 720 can beformed in such a manner that a conductive film is formed by a sputteringmethod or a vacuum evaporation method so as to cover the gate electrode707, and then the conductive film is processed by etching into a desiredshape.

As the conductive film for forming the conductive films 719 and 720, anyof the following materials can be used: an element selected fromaluminum, chromium, copper, tantalum, titanium, molybdenum, or tungsten;an alloy including any of these elements; an alloy film including theabove elements in combination; and the like. Alternatively, a structuremay be employed in which a film of a refractory metal such as chromium,tantalum, titanium, molybdenum, or tungsten is stacked over or below ametal film of aluminum or copper. Aluminum or copper is preferably usedin combination with a refractory metal material in order to prevent aheat resistance problem and a corrosive problem. As the refractory metalmaterial, molybdenum, titanium, chromium, tantalum, tungsten, neodymium,scandium, yttrium, or the like can be used.

Further, the conductive film for forming the conductive films 719 and720 may have a single-layer structure or a layered structure of two ormore layers. For example, a single-layer structure of an aluminum filmcontaining silicon, a two-layer structure in which a titanium film isstacked over an aluminum film, a three-layer structure in which atitanium film, an aluminum film, and a titanium film are stacked in thisorder, and the like can be given. A Cu—Mg—Al alloy, a Mo—Ti alloy, Ti,and Mo have high adhesiveness with an oxide film. Therefore, for theconductive films 719 and 720, a layered structure is employed in which aconductive film containing a Cu—Mg—Al alloy, a Mo—Ti alloy, Ti, or Mo isused for the lower layer and a conductive film containing Cu is used forthe upper layer; thus, the adhesiveness between an insulating film whichis an oxide film and the conductive films 719 and 720 can be increased.

For the conductive film for forming the conductive films 719 and 720, aconductive metal oxide may be used. As the conductive metal oxide,indium oxide, tin oxide, zinc oxide, indium oxide-tin oxide, indiumoxide-zinc oxide, or the conductive metal oxide material containingsilicon or silicon oxide can be used.

In the case where heat treatment is performed after the formation of theconductive film, the conductive film preferably has heat resistance highenough to withstand the heat treatment.

Note that the material and etching conditions are adjusted asappropriate so that the oxide semiconductor layer 716 is not removed inetching of the conductive film as much as possible. Depending on theetching conditions, there are some cases in which an exposed portion ofthe oxide semiconductor layer 716 is partially etched and thus a groove(a depression portion) is formed.

In this embodiment, a titanium film is used for the conductive film.Therefore, wet etching can be selectively performed on the conductivefilm using a solution (an ammonia hydrogen peroxide mixture) containingammonia and hydrogen peroxide water. As the ammonia hydrogen peroxidemixture, specifically, a solution in which hydrogen peroxide water of 31wt %, ammonia water of 28 wt %, and water are mixed at a volume ratio of5:2:2 is used. Alternatively, dry etching may be performed on theconductive film with the use of a gas containing chlorine (Cl₂), boronchloride (BCl₃), or the like.

In order to reduce the number of photomasks and steps in aphotolithography step, etching may be performed with the use of a resistmask formed using a multi-tone mask through which light is transmittedso as to have a plurality of intensities. A resist mask formed with theuse of a multi-tone mask has a plurality of thicknesses and further canbe changed in shape by etching; therefore, the resist mask can be usedin a plurality of etching steps for processing films into differentpatterns. Therefore, a resist mask corresponding to at least two kindsor more of different patterns can be formed by one multi-tone mask.Thus, the number of light-exposure masks can be reduced and the numberof corresponding photolithography steps can be also reduced, wherebysimplification of the process can be realized.

Further, an oxide conductive film functioning as a source region and adrain region may be provided between the oxide semiconductor layer 716and the conductive films 719 and 720 functioning as source and drainelectrodes. The material of the oxide conductive film preferablycontains zinc oxide as a component and preferably does not containindium oxide. For such an oxide conductive film, zinc oxide, zincaluminum oxide, zinc aluminum oxynitride, gallium zinc oxide, or thelike can be used.

For example, in the case where the oxide conductive film is formed, anetching process for forming the oxide conductive film and an etchingprocess for forming the conductive films 719 and 720 may be performedconcurrently.

By providing the oxide conductive film functioning as a source regionand a drain region, the resistance between the oxide semiconductor layer716 and the conductive films 719 and 720 can be lowered, so that thetransistor can operate at high speed. In addition, by providing theoxide conductive film functioning as a source region and a drain region,the withstand voltage of the transistor can be increased.

Next, plasma treatment may be performed using a gas such as N₂O, N₂, orAr. Through this plasma treatment, water or the like adhering to anexposed surface of the oxide semiconductor layer is removed. Plasmatreatment may be performed using a mixture gas of oxygen and argon.

After the plasma treatment, as illustrated in FIG. 8B, the gateinsulating film 721 is formed so as to cover the conductive films 719and 720 and the oxide semiconductor layer 716. Then, a gate electrode722 is formed over the gate insulating film 721 so as to overlap withthe oxide semiconductor layer 716, and a conductive film 723 is formedover the gate insulating film 721 so as to overlap with the conductivefilm 719.

The gate insulating film 721 can be formed using a material and alayered structure which are similar to those of the gate insulating film703. Note that the gate insulating film 721 preferably includesimpurities such as moisture and hydrogen as little as possible, and thegate insulating film 721 may be formed using a single-layer insulatingfilm or a plurality of insulating films stacked. When hydrogen iscontained in the gate insulating film 721, hydrogen enters the oxidesemiconductor layer 716 or oxygen in the oxide semiconductor layer 716is extracted by hydrogen, whereby the oxide semiconductor layer 716 haslower resistance (n-type conductivity); thus, a parasitic channel mightbe formed. Thus, it is important that a deposition method in whichhydrogen is not used be employed in order to form the gate insulatingfilm 721 containing hydrogen as little as possible. A material having ahigh barrier property is preferably used for the gate insulating film721. As the insulating film having a high barrier property, a siliconnitride film, a silicon nitride oxide film, an aluminum nitride film, analuminum nitride oxide film, or the like can be used, for example. Whena plurality of insulating films stacked are used, an insulating filmhaving a lower proportion of nitrogen such as a silicon oxide film or asilicon oxynitride film is formed on the side closer to the oxidesemiconductor layer 716 than the insulating film having a high barrierproperty. Then, the insulating film having a high barrier property isformed so as to overlap with the conductive films 719 and 720 and theoxide semiconductor layer 716 with the insulating film having a lowerproportion of nitrogen sandwiched therebetween. When the insulating filmhaving a high barrier property is used, impurities such as moisture andhydrogen can be prevented from entering the oxide semiconductor layer716, the gate insulating film 721, or the interface between the oxidesemiconductor layer 716 and another insulating film and the vicinitythereof. In addition, the insulating film having a lower proportion ofnitrogen such as a silicon oxide film or a silicon oxynitride filmformed in contact with the oxide semiconductor layer 716 can prevent theinsulating film formed using a material having a high barrier propertyfrom being in direct contact with the oxide semiconductor layer 716.

In this embodiment, the gate insulating film 721 with a structure inwhich a 100-nm-thick silicon nitride film formed by a sputtering methodis stacked over a 200-nm-thick silicon oxide film formed by a sputteringmethod is formed. The substrate temperature in film formation may behigher than or equal to room temperature and lower than or equal to 300°C. and in this embodiment, is 100° C.

After the gate insulating film 721 is formed, heat treatment may beperformed. The heat treatment is performed in a nitrogen atmosphere, anatmosphere of ultra-dry air, or a rare gas (e.g., argon or helium)atmosphere preferably at a temperature higher than or equal to 200° C.and lower than or equal to 400° C., for example, higher than or equal to250° C. and lower than or equal to 350° C. The water content in the gasis preferably 20 ppm or less, more preferably 1 ppm or less, furtherpreferably 10 ppb or less. For example, heat treatment is performed at250° C. for one hour in a nitrogen atmosphere in this embodiment.Alternatively, RTA treatment for a short time at a high temperature maybe performed before the formation of the conductive films 719 and 720 ina manner similar to that of the heat treatment performed on the oxidesemiconductor layer for reduction of moisture or hydrogen. Even whenoxygen deficiency is generated in the oxide semiconductor layer 716 bythe previous heat treatment performed on the oxide semiconductor layer716 by performing heat treatment after providing the gate insulatingfilm 721 containing oxygen, oxygen is supplied to the oxidesemiconductor layer 716 from the gate insulating film 721. By supplyingoxygen to the oxide semiconductor layer 716, oxygen deficiency thatserves as a donor can be reduced in the oxide semiconductor layer 716and the stoichiometric ratio can be satisfied. It is preferable that theproportion of oxygen in the oxide semiconductor layer 716 be higher thanthat in the stoichiometric composition. As a result, the oxidesemiconductor layer 716 can be made to be substantially i-type andvariation in electrical characteristics of the transistor due to oxygendeficiency can be reduced; thus, electrical characteristics can beimproved. The timing of this heat treatment is not particularly limitedas long as it is after the formation of the gate insulating film 721.When this heat treatment doubles as another step such as heat treatmentfor formation of a resin film or heat treatment for reduction of theresistance of a transparent conductive film, the oxide semiconductorlayer 716 can be made to be substantially i-type without the number ofsteps increased.

Moreover, the oxygen deficiency that serves as a donor in the oxidesemiconductor layer 716 may be reduced by subjecting the oxidesemiconductor layer 716 to heat treatment in an oxygen atmosphere sothat oxygen is added to the oxide semiconductor. The heat treatment isperformed at a temperature higher than or equal to 100° C. and lowerthan 350° C., preferably higher than or equal to 150° C. and lower than250° C., for example. It is preferable that an oxygen gas used for theheat treatment in an oxygen atmosphere do not include water, hydrogen,or the like. Alternatively, the purity of the oxygen gas which isintroduced into the heat treatment apparatus is preferably greater thanor equal to 6N (99.9999%) or more, further preferably greater than orequal to 7N (99.99999%) (that is, the impurity concentration in theoxygen gas is less than or equal to 1 ppm, preferably less than or equalto 0.1 ppm).

Alternatively, oxygen may be added to the oxide semiconductor layer 716by an ion implantation method, an ion doping method, or the like toreduce oxygen deficiency serving as a donor. For example, oxygen whichis made into a plasma state with a microwave at 2.45 GHz may be added tothe oxide semiconductor layer 716.

The gate electrode 722 and the conductive film 723 can be formed in sucha manner that a conductive film is formed over the gate insulating film721 and then is processed by etching. The gate electrode 722 and theconductive film 723 can be formed using a material similar to that ofthe gate electrode 707 or the conductive films 719 and 720.

The thickness of each of the gate electrode 722 and the conductive film723 is 10 nm to 400 nm, preferably 100 nm to 200 nm. In this embodiment,after a conductive film for the gate electrode is formed to a thicknessof 150 nm by a sputtering method using a tungsten target, the conductivefilm is processed into a desired shape by etching, whereby the gateelectrode 722 and the conductive film 723 are formed. Note that a resistmask may be formed by an inkjet method. Formation of the resist mask byan inkjet method needs no photomask; thus, manufacturing cost can bereduced.

Through the above steps, the transistor 109 is formed.

Note that a portion where the conductive film 719 and the conductivefilm 723 overlap with each other with the gate insulating film 721provided therebetween corresponds to the capacitor 108.

Although the transistor 109 is described as a single-gate transistor, amulti-gate transistor including a plurality of channel formation regionscan be manufactured when a plurality of gate electrodes electricallyconnected to each other are included, if needed.

Note that an insulating film in contact with the oxide semiconductorlayer 716 (which corresponds to the gate insulating film 721 in thisembodiment) may be formed using an insulating material containing aGroup 13 element and oxygen. Many of oxide semiconductor materialscontain a Group 13 element, and an insulating material containing aGroup 13 element works well with oxide semiconductors. By using aninsulating material containing a Group 13 element for an insulating filmin contact with the oxide semiconductor layer, an interface with theoxide semiconductor layer can keep a favorable state.

An insulating material containing a Group 13 element refers to aninsulating material containing one or more Group 13 elements. As theinsulating material containing a Group 13 element, gallium oxide,aluminum oxide, aluminum gallium oxide, gallium aluminum oxide, or thelike can be given as an example. Here, aluminum gallium oxide refers toa material in which the amount of aluminum is larger than that ofgallium in atomic percent, and gallium aluminum oxide refers to amaterial in which the amount of gallium is larger than or equal to thatof aluminum in atomic percent.

For example, when a material containing gallium oxide is used for aninsulating film that is in contact with an oxide semiconductor layercontaining gallium, characteristics at the interface between the oxidesemiconductor layer and the insulating film can be kept favorable. Forexample, the oxide semiconductor layer and an insulating film containinggallium oxide are provided in contact with each other, so that pileup ofhydrogen at the interface between the oxide semiconductor layer and theinsulating film can be reduced. Note that a similar effect can beobtained in the case where an element in the same group as a constituentelement of the oxide semiconductor is used in an insulating film. Forexample, it is effective to form an insulating film with the use of amaterial containing aluminum oxide. Note that aluminum oxide has aproperty of not easily transmitting water. Thus, it is preferable to usea material containing aluminum oxide in terms of preventing entry ofwater into the oxide semiconductor layer.

The insulating material of the insulating film in contact with the oxidesemiconductor layer 716 is preferably made to contain oxygen in aproportion higher than that in the stoichiometric composition by heattreatment in an oxygen atmosphere or by oxygen doping. “Oxygen doping”refers to addition of oxygen into a bulk. Note that the term “bulk” isused in order to clarify that oxygen is added not only to a surface of athin film but also to the inside of the thin film. In addition, “oxygendoping” includes oxygen plasma doping in which oxygen which is made tobe plasma is added to a bulk. The oxygen doping may be performed by anion implantation method or an ion doping method.

For example, in the case where the insulating film in contact with theoxide semiconductor layer 716 is formed using gallium oxide, thecomposition of gallium oxide can be set to be Ga₂O_(x) (x=3+α, 0<α<1) byheat treatment in an oxygen atmosphere or by oxygen doping.

In the case where the insulating film in contact with the oxidesemiconductor layer 716 is formed using aluminum oxide, the compositionof aluminum oxide can be set to be Al₂O_(x) (x=3+a, 0<α<1) by heattreatment in an oxygen atmosphere or by oxygen doping.

In the case where the insulating film in contact with the oxidesemiconductor layer 716 is formed using gallium aluminum oxide (aluminumgallium oxide), the composition of gallium aluminum oxide (aluminumgallium oxide) can be set to be Ga_(x)Al_(2-x)O_(3+α) (0<x<2, 0<α<1) byheat treatment in an oxygen atmosphere or by oxygen doping.

By oxygen doping, an insulating film which includes a region where theproportion of oxygen is higher than that in the stoichiometriccomposition can be formed. When the insulating film including such aregion is in contact with the oxide semiconductor layer, excess oxygenin the insulating film is supplied to the oxide semiconductor layer, andoxygen defects in the oxide semiconductor layer or at the interfacebetween the oxide semiconductor layer and the insulating film arereduced. Thus, the oxide semiconductor layer can be made to be an i-typeor substantially i-type oxide semiconductor.

Note that the insulating film which includes a region where theproportion of oxygen is higher than that in the stoichiometriccomposition may be applied to either the insulating film located on theupper side of the oxide semiconductor layer 716 or the insulating filmlocated on the lower side of the oxide semiconductor layer 716 of theinsulating films in contact with the oxide semiconductor layer 716;however, it is preferable to apply such an insulating film to both ofthe insulating films in contact with the oxide semiconductor layer 716.The above-described effect can be enhanced with a structure where theoxide semiconductor layer 716 is sandwiched between the insulating filmseach including a region where the proportion of oxygen is higher thanthat in the stoichiometric composition, which are used as the insulatingfilms in contact with the oxide semiconductor layer 716 and located onthe upper side and the lower side of the oxide semiconductor layer 716.

The insulating films on the upper side and the lower side of the oxidesemiconductor layer 716 may contain the same constituent elements ordifferent constituent elements. For example, the insulating films on theupper side and the lower side may be both formed using gallium oxidewhose composition is Ga₂O_(x) (x=3+α, 0<α<1). Alternatively, one of theinsulating films on the upper side and the lower side may be formedusing Ga₂O_(x) (x=3+a, 0<α<1) and the other may be formed using aluminumoxide whose composition is Al₂O_(x) (x=3+a, 0<α<1).

The insulating film in contact with the oxide semiconductor layer 716may be formed by stacking insulating films each including a region wherethe proportion of oxygen is higher than that in the stoichiometriccomposition. For example, the insulating film on the upper side of theoxide semiconductor layer 716 may be formed as follows: gallium oxidewhose composition is Ga₂O_(x) (x=3+a, 0<α<1) is formed and galliumaluminum oxide (aluminum gallium oxide) whose composition isGa_(x)Al_(2-x)O_(3+α) (0<x<2, 0<α<1) is formed thereover. Note that theinsulating film on the lower side of the oxide semiconductor layer 716may be formed by stacking insulating films each including a region wherethe proportion of oxygen is higher than that in the stoichiometriccomposition. Further, both of the insulating films on the upper side andthe lower side of the oxide semiconductor layer 716 may be formed bystacking insulating films each including a region where the proportionof oxygen is higher than that in the stoichiometric composition.

Next, as illustrated in FIG. 8C, an insulating film 724 is formed so asto cover the gate insulating film 721, the conductive film 723, and thegate electrode 722. The insulating film 724 can be formed by a PVDmethod, a CVD method, or the like. The insulating film 724 can be formedusing a material containing an inorganic insulating material such assilicon oxide, silicon oxynitride, silicon nitride, hafnium oxide,gallium oxide, or aluminum oxide. Note that for the insulating film 724,a material with a low dielectric constant or a structure with a lowdielectric constant (e.g., a porous structure) is preferably used. Whenthe dielectric constant of the insulating film 724 is lowered, theparasitic capacitance generated between wirings or electrodes can bereduced, which results in higher speed operation. Note that although theinsulating film 724 has a single-layer structure in this embodiment, oneembodiment of the present invention is not limited to this. Theinsulating film 724 may have a layered structure of two or more layers.

Next, an opening 725 is formed in the gate insulating film 721 and theinsulating film 724, so that part of the conductive film 720 is exposed.After that, a wiring 726 which is in contact with the conductive film720 through the opening 725 is formed over the insulating film 724.

The wiring 726 is formed in such a manner that a conductive film isformed by a PVD method or a CVD method and then the conductive film isprocessed by etching. As a material of the conductive film, an elementselected from aluminum, chromium, copper, tantalum, titanium,molybdenum, or tungsten, an alloy containing any of these elements as acomponent, or the like can be used. Any of manganese, magnesium,zirconium, beryllium, neodymium, and scandium, or a material containingany of these in combination may be used.

Specifically, for example, it is possible to employ a method in which athin titanium film is formed in a region including the opening of theinsulating film 724 by a PVD method and a thin titanium film (with athickness of about 5 nm) is formed by a PVD method, and then, analuminum film is formed so as to be embedded in the opening 725. Here,the titanium film formed by a PVD method has a function of reducing anoxide film (e.g., a natural oxide film) formed on a surface where thetitanium film is formed, to decrease contact resistance with a lowerelectrode (here, the conductive film 720). In addition, hillock of thealuminum film can be prevented. A copper film may be formed by a platingmethod after the formation of the barrier film of titanium, titaniumnitride, or the like.

Next, an insulating film 727 is formed so as to cover the wiring 726.Through the series of steps, the storage element can be manufactured.

Note that in the manufacturing method, the conductive films 719 and 720functioning as source and drain electrodes are formed after theformation of the oxide semiconductor layer 716. Thus, as illustrated inFIG. 8B, in the transistor 109 obtained by the manufacturing method, theconductive films 719 and 720 are formed over the oxide semiconductorlayer 716. However, in the transistor 109, the conductive filmsfunctioning as source and drain electrodes may be formed below the oxidesemiconductor layer 716, that is, between the oxide semiconductor layer716 and the insulating films 712 and 713.

FIG. 9 is a cross-sectional view of the transistor 109 in the case wherethe conductive films 719 and 720 functioning as source and drainelectrodes are provided between the oxide semiconductor layer 716 andthe insulating films 712 and 713. The transistor 109 illustrated in FIG.9 can be obtained in such a manner that the conductive films 719 and 720are formed after the formation of the insulating film 713, and then, theoxide semiconductor layer 716 is formed.

This embodiment can be implemented in combination with any of the aboveembodiments. [Embodiment 6]

In this embodiment, a transistor which includes an oxide semiconductorlayer and has a structure different from that in Embodiment 5 will bedescribed.

A transistor 901 illustrated in FIG. 10A includes an oxide semiconductorlayer 903 which is formed over an insulating film 902 and functions asan active layer; a source electrode 904 and a drain electrode 905 formedover the oxide semiconductor layer 903; a gate insulating film 906 overthe oxide semiconductor layer 903, and the source electrode 904 and thedrain electrode 905; and a gate electrode 907 which is provided over thegate insulating film 906 so as to overlap with the oxide semiconductorlayer 903.

The transistor 901 illustrated in FIG. 10A is of a top-gate type wherethe gate electrode 907 is formed over the oxide semiconductor layer 903,and is also of a top-contact type where the source electrode 904 and thedrain electrode 905 are formed over the oxide semiconductor layer 903.In the transistor 901, the source electrode 904 and the drain electrode905 do not overlap with the gate electrode 907. That is, the distancebetween the gate electrode 907 and each of the source electrode 904 andthe drain electrode 905 is larger than the thickness of the gateinsulating film 906. Therefore, in the transistor 901, the parasiticcapacitance generated between the gate electrode 907 and each of thesource electrode 904 and the drain electrode 905 can be small, so thatthe transistor 901 can operate at high speed.

The oxide semiconductor layer 903 includes a pair of high-concentrationregions 908 which are obtained by addition of dopant imparting n-typeconductivity to the oxide semiconductor layer 903 after formation of thegate electrode 907. Further, the oxide semiconductor layer 903 includesa channel formation region 909 which overlaps with the gate electrode907 with the gate insulating film 906 interposed therebetween. In theoxide semiconductor layer 903, the channel formation region 909 isprovided between the pair of high-concentration regions 908. Theaddition of dopant for forming the high-concentration regions 908 can beperformed by an ion implantation method. As the dopant, for example, arare gas such as helium, argon, or xenon, a Group 15 element such asnitrogen, phosphorus, arsenic, or antimony, or the like can be used.

For example, in the case where nitrogen is used as the dopant, theconcentration of nitrogen atoms in the high-concentration regions 908 ispreferably higher than or equal to 5×10¹⁹/cm³ and lower than or equal to1×10²²/cm³.

The high-concentration regions 908 to which the dopant imparting n-typeconductivity is added have higher conductivity than the other regions inthe oxide semiconductor layer 903. Therefore, by providing thehigh-concentration regions 908 in the oxide semiconductor layer 903, theresistance between the source electrode 904 and the drain electrode 905can be decreased.

In the case where an In—Ga—Zn-based oxide semiconductor is used for theoxide semiconductor layer 903, heat treatment is performed at atemperature higher than or equal to 300° C. and lower than or equal to600° C. for one hour after nitrogen is added. Consequently, the oxidesemiconductor in the high-concentration regions 908 has a wurtzitecrystal structure. Since the oxide semiconductor in thehigh-concentration regions 908 has a wurtzite crystal structure, theconductivity of the high-concentration regions 908 can be furtherincreased and the resistance between the source electrode 904 and thedrain electrode 905 can be decreased. Note that in order to effectivelydecrease the resistance between the source electrode 904 and the drainelectrode 905 by forming an oxide semiconductor having a wurtzitecrystal structure, in the case of using nitrogen as the dopant, theconcentration of nitrogen atoms in the high-concentration regions 908 ispreferably higher than or equal to 1×10²⁰/cm³ and lower than or equal to7 atoms %. However, there is also a case where an oxide semiconductorhaving a wurtzite crystal structure can be obtained even when theconcentration of nitrogen atoms is lower than the above range.

The oxide semiconductor layer 903 may include an oxide including CAAC.In the case where the oxide semiconductor layer 903 includes an oxideincluding CAAC, the conductivity of the oxide semiconductor layer 903can be increased as compared to the case of an amorphous semiconductor;thus, the resistance between the source electrode 904 and the drainelectrode 905 can be decreased.

By decreasing the resistance between the source electrode 904 and thedrain electrode 905, high on-state current and high-speed operation canbe ensured even when the transistor 901 is miniaturized. With theminiaturization of the transistor 901, the area occupied by the storageelement including the transistor can be reduced and the storage capacityper unit area can be increased.

A transistor 911 illustrated in FIG. 10B includes a source electrode 914and a drain electrode 915 formed over an insulating film 912; an oxidesemiconductor layer 913 which is formed over the source electrode 914and the drain electrode 915 and functions as an active layer; a gateinsulating film 916 over the oxide semiconductor layer 913, and thesource electrode 914 and the drain electrode 915; and a gate electrode917 which is provided over the gate insulating film 916 so as to overlapwith the oxide semiconductor layer 913.

The transistor 911 illustrated in FIG. 10B is of a top-gate type wherethe gate electrode 917 is formed over the oxide semiconductor layer 913,and is also of a bottom-contact type where the source electrode 914 andthe drain electrode 915 are formed below the oxide semiconductor layer913. In the transistor 911, the source electrode 914 and the drainelectrode 915 do not overlap with the gate electrode 917 as in thetransistor 901; thus, the parasitic capacitance generated between thegate electrode 917 and each of the source electrode 914 and the drainelectrode 915 can be small, so that the transistor 911 can operate athigh speed.

The oxide semiconductor layer 913 includes a pair of high-concentrationregions 918 which are obtained by addition of dopant imparting n-typeconductivity to the oxide semiconductor layer 913 after formation of thegate electrode 917. Further, the oxide semiconductor layer 913 includesa channel formation region 919 which overlaps with the gate electrode917 with the gate insulating film 916 interposed therebetween. In theoxide semiconductor layer 913, the channel formation region 919 isprovided between the pair of high-concentration regions 918.

Like the above-described high-concentration regions 908 included in thetransistor 901, the high-concentration regions 918 can be formed by anion implantation method. The kind of dopant in the case of thehigh-concentration regions 908 can be referred to for the kind of dopantfor forming the high-concentration regions 918.

For example, in the case where nitrogen is used as the dopant, theconcentration of nitrogen atoms in the high-concentration regions 918 ispreferably higher than or equal to 5×10¹⁹/cm³ and lower than or equal to1×10²²/cm³.

The high-concentration regions 918 to which the dopant imparting n-typeconductivity is added have higher conductivity than the other regions inthe oxide semiconductor layer 913. Therefore, by providing thehigh-concentration regions 918 in the oxide semiconductor layer 913, theresistance between the source electrode 914 and the drain electrode 915can be decreased.

In the case where an In—Ga—Zn-based oxide semiconductor is used for theoxide semiconductor layer 913, heat treatment is performed at atemperature higher than or equal to 300° C. and lower than or equal to600° C. after nitrogen is added. Consequently, the oxide semiconductorin the high-concentration regions 918 has a wurtzite crystal structure.Since the oxide semiconductor in the high-concentration regions 918 hasa wurtzite crystal structure, the conductivity of the high-concentrationregions 918 can be further increased and the resistance between thesource electrode 914 and the drain electrode 915 can be decreased. Notethat in order to effectively decrease the resistance between the sourceelectrode 914 and the drain electrode 915 by forming an oxidesemiconductor having a wurtzite crystal structure, in the case of usingnitrogen as the dopant, the concentration of nitrogen atoms in thehigh-concentration regions 918 is preferably higher than or equal to1×10²⁰/cm³ and lower than or equal to 7 atoms %. However, there is alsoa case where an oxide semiconductor having a wurtzite crystal structurecan be obtained even when the concentration of nitrogen atoms is lowerthan the above range.

The oxide semiconductor layer 913 may include an oxide including CAAC.In the case where the oxide semiconductor layer 913 includes an oxideincluding CAAC, the conductivity of the oxide semiconductor layer 913can be increased as compared to the case of an amorphous semiconductor;thus, the resistance between the source electrode 914 and the drainelectrode 915 can be decreased.

By decreasing the resistance between the source electrode 914 and thedrain electrode 915, high on-state current and high-speed operation canbe ensured even when the transistor 911 is miniaturized. With theminiaturization of the transistor 911, the area occupied by the storageelement including the transistor can be reduced and the storage capacityper unit area can be increased.

A transistor 921 illustrated in FIG. 10C includes an oxide semiconductorlayer 923 which is formed over an insulating film 922 and functions asan active layer; a source electrode 924 and a drain electrode 925 formedover the oxide semiconductor layer 923; a gate insulating film 926 overthe oxide semiconductor layer 923, and the source electrode 924 and thedrain electrode 925; and a gate electrode 927 which is provided over thegate insulating film 926 so as to overlap with the oxide semiconductorlayer 923. In addition, the transistor 921 includes a sidewall insulator930 which is formed of an insulating film and is provided on a sidesurface of the gate electrode 927.

The transistor 921 illustrated in FIG. 10C is of a top-gate type wherethe gate electrode 927 is formed over the oxide semiconductor layer 923,and is also of a top-contact type where the source electrode 924 and thedrain electrode 925 are formed over the oxide semiconductor layer 923.In the transistor 921, the source electrode 924 and the drain electrode925 do not overlap with the gate electrode 927 as in the transistor 901;thus, the parasitic capacitance generated between the gate electrode 927and each of the source electrode 924 and the drain electrode 925 can besmall, so that the transistor 921 can operate at high speed.

The oxide semiconductor layer 923 includes a pair of high-concentrationregions 928 and a pair of low-concentration regions 929 which areobtained by addition of dopant imparting n-type conductivity to theoxide semiconductor layer 923 after formation of the gate electrode 927.Further, the oxide semiconductor layer 923 includes a channel formationregion 931 which overlaps with the gate electrode 927 with the gateinsulating film 926 interposed therebetween. In the oxide semiconductorlayer 923, the channel formation region 931 is provided between the pairof low-concentration regions 929 which are provided between the pair ofhigh-concentration regions 928. The pair of low-concentration regions929 is provided in a region which is in the oxide semiconductor layer923 and overlaps with the sidewall insulator 930 with the gateinsulating film 926 interposed therebetween.

Like the above-described high-concentration regions 908 included in thetransistor 901, the high-concentration regions 928 and thelow-concentration regions 929 can be formed by an ion implantationmethod. The kind of dopant in the case of the high-concentration regions908 can be referred to for the kind of dopant for forming thehigh-concentration regions 928.

For example, in the case where nitrogen is used as the dopant, theconcentration of nitrogen atoms in the high-concentration regions 928 ispreferably higher than or equal to 5×10¹⁹/cm³ and lower than or equal to1×10²²/cm³. Further, for example, in the case where nitrogen is used asthe dopant, the concentration of nitrogen atoms in the low-concentrationregions 929 is preferably higher than or equal to 5×10¹⁸/cm³ and lowerthan 5×10¹⁹/cm³.

The high-concentration regions 928 to which the dopant imparting n-typeconductivity is added have higher conductivity than the other regions inthe oxide semiconductor layer 923. Therefore, by providing thehigh-concentration regions 928 in the oxide semiconductor layer 923, theresistance between the source electrode 924 and the drain electrode 925can be decreased. The low-concentration regions 929 are provided betweenthe channel formation region 931 and the high-concentration regions 928,whereby a negative shift of the threshold voltage due to a short-channeleffect can be reduced.

In the case where an In—Ga—Zn-based oxide semiconductor is used for theoxide semiconductor layer 923, heat treatment is performed at atemperature higher than or equal to 300° C. and lower than or equal to600° C. after nitrogen is added. Consequently, the oxide semiconductorin the high-concentration regions 928 has a wurtzite crystal structure.Further, depending on the nitrogen concentration, the low-concentrationregions 929 also have a wurtzite crystal structure due to the heattreatment. Since the oxide semiconductor in the high-concentrationregions 928 has a wurtzite crystal structure, the conductivity of thehigh-concentration regions 928 can be further increased and theresistance between the source electrode 924 and the drain electrode 925can be decreased. Note that in order to effectively decrease theresistance between the source electrode 924 and the drain electrode 925by forming an oxide semiconductor having a wurtzite crystal structure,in the case of using nitrogen as the dopant, the concentration ofnitrogen atoms in the high-concentration regions 928 is preferablyhigher than or equal to 1×10²⁰/cm³ and lower than or equal to 7 atoms %.However, there is also a case where an oxide semiconductor having awurtzite crystal structure can be obtained even when the concentrationof nitrogen atoms is lower than the above range.

The oxide semiconductor layer 923 may include an oxide including CAAC.In the case where the oxide semiconductor layer 923 includes an oxideincluding CAAC, the conductivity of the oxide semiconductor layer 923can be increased as compared to the case of an amorphous semiconductor;thus, the resistance between the source electrode 924 and the drainelectrode 925 can be decreased.

By decreasing the resistance between the source electrode 924 and thedrain electrode 925, high on-state current and high-speed operation canbe ensured even when the transistor 921 is miniaturized. With theminiaturization of the transistor 921, the area occupied by a memorycell including the transistor can be reduced and the storage capacityper unit area of a cell array can be increased.

A transistor 941 illustrated in FIG. 10D includes a source electrode 944and a drain electrode 945 formed over an insulating film 942; an oxidesemiconductor layer 943 which is formed over the source electrode 944and the drain electrode 945 and functions as an active layer; a gateinsulating film 946 over the oxide semiconductor layer 943, and thesource electrode 944 and the drain electrode 945; and a gate electrode947 which is provided over the gate insulating film 946 so as to overlapwith the oxide semiconductor layer 943. In addition, the transistor 941includes a sidewall insulator 950 which is formed of an insulating filmand is provided on a side surface of the gate electrode 947.

The transistor 941 illustrated in FIG. 10D is of a top-gate type wherethe gate electrode 947 is formed over the oxide semiconductor layer 943,and is also of a bottom-contact type where the source electrode 944 andthe drain electrode 945 are formed below the oxide semiconductor layer943. In the transistor 941, the source electrode 944 and the drainelectrode 945 do not overlap with the gate electrode 947 as in thetransistor 901. Therefore, the parasitic capacitance generated betweenthe gate electrode 947 and each of the source electrode 944 and thedrain electrode 945 can be small, so that the transistor 941 can operateat high speed.

The oxide semiconductor layer 943 includes a pair of high-concentrationregions 948 and a pair of low-concentration regions 949 which areobtained by addition of dopant imparting n-type conductivity to theoxide semiconductor layer 943 after formation of the gate electrode 947.Further, the oxide semiconductor layer 943 includes a channel formationregion 951 which overlaps with the gate electrode 947 with the gateinsulating film 946 interposed therebetween. In the oxide semiconductorlayer 943, the channel formation region 951 is provided between the pairof low-concentration regions 949 which are provided between the pair ofhigh-concentration regions 948. The pair of low-concentration regions949 is provided in a region which is in the oxide semiconductor layer943 and overlaps with the sidewall insulator 950 with the gateinsulating film 946 interposed therebetween.

Like the above-described high-concentration regions 908 included in thetransistor 901, the high-concentration regions 948 and thelow-concentration regions 949 can be formed by an ion implantationmethod. The kind of dopant in the case of the high-concentration regions908 can be referred to for the kind of dopant for forming thehigh-concentration regions 948.

For example, in the case where nitrogen is used as the dopant, theconcentration of nitrogen atoms in the high-concentration regions 948 ispreferably higher than or equal to 5×10¹⁹/cm³ and lower than or equal to1×10²²/cm³. Further, for example, in the case where nitrogen is used asthe dopant, the concentration of nitrogen atoms in the low-concentrationregions 949 is preferably higher than or equal to 5×10¹⁸/cm³ and lowerthan 5×10¹⁹/cm³.

The high-concentration regions 948 to which the dopant imparting n-typeconductivity is added have higher conductivity than the other regions inthe oxide semiconductor layer 943. Therefore, by providing thehigh-concentration regions 948 in the oxide semiconductor layer 943, theresistance between the source electrode 944 and the drain electrode 945can be decreased. The low-concentration regions 949 are provided betweenthe channel formation region 951 and the high-concentration regions 948,whereby a negative shift of the threshold voltage due to a short-channeleffect can be reduced.

In the case where an In—Ga—Zn-based oxide semiconductor is used for theoxide semiconductor layer 943, heat treatment is performed at atemperature higher than or equal to 300° C. and lower than or equal to600° C. after nitrogen is added. Consequently, the oxide semiconductorin the high-concentration regions 948 has a wurtzite crystal structure.Further, depending on the nitrogen concentration, the low-concentrationregions 949 also have a wurtzite crystal structure due to the heattreatment. Since the oxide semiconductor in the high-concentrationregions 948 has a wurtzite crystal structure, the conductivity of thehigh-concentration regions 948 can be further increased and theresistance between the source electrode 944 and the drain electrode 945can be decreased. Note that in order to effectively decrease theresistance between the source electrode 944 and the drain electrode 945by forming an oxide semiconductor having a wurtzite crystal structure,in the case of using nitrogen as the dopant, the concentration ofnitrogen atoms in the high-concentration regions 948 is preferablyhigher than or equal to 1×10²⁰/cm³ and lower than or equal to 7 atoms %.However, there is also a case where an oxide semiconductor having awurtzite crystal structure can be obtained even when the concentrationof nitrogen atoms is lower than the above range.

The oxide semiconductor layer 943 may include an oxide including CAAC.In the case where the oxide semiconductor layer 943 includes an oxideincluding CAAC, the conductivity of the oxide semiconductor layer 943can be increased as compared to the case of an amorphous semiconductor;thus, the resistance between the source electrode 944 and the drainelectrode 945 can be decreased.

By decreasing the resistance between the source electrode 944 and thedrain electrode 945, high on-state current and high-speed operation canbe ensured even when the transistor 941 is miniaturized. With theminiaturization of the transistor 941, the area occupied by the storageelement including the transistor can be reduced and the storage capacityper unit area can be increased.

Note that as a method for forming high-concentration regions functioningas a source region and a drain region in a self-aligning process in atransistor including an oxide semiconductor, disclosed is a method inwhich a surface of an oxide semiconductor layer is exposed and argonplasma treatment is performed so that the resistivity of a region whichis exposed to plasma in the oxide semiconductor layer is decreased (S.Jeon et al., “180 nm Gate Length Amorphous InGaZnO Thin Film Transistorfor High Density Image Sensor Applications”, IEDM Tech. Dig., pp.504-507, 2010).

However, in the above manufacturing method, after a gate insulating filmis formed, the gate insulating film needs to be partially removed sothat a portion which is to be the source region and the drain region isexposed. Therefore, at the time of removing the gate insulating film,the oxide semiconductor layer which is below the gate insulating film ispartially over-etched; thus, the thickness of the portion which is to bethe source region and the drain region becomes small. As a result, theresistance of the source region and the drain region is increased, anddefects of transistor characteristics due to overetching easily occur.

In order to promote miniaturization of a transistor, a dry etchingmethod with which high processing accuracy can be provided needs to beemployed. However, the overetching easily occurs remarkably in the casewhere a dry etching method with which the selectivity of a gateinsulating film to an oxide semiconductor layer is not sufficientlyobtained is employed.

For example, the overetching does not become a problem as long as theoxide semiconductor layer has an enough thickness; however, when thechannel length is 200 nm or shorter, the thickness of the oxidesemiconductor layer in a region which is to be a channel formationregion needs to be 20 nm or shorter, preferably 10 nm or shorter so thata short-channel effect can be prevented. When such a thin oxidesemiconductor layer is used, the overetching of the oxide semiconductorlayer is not preferable because the resistance of the source region andthe drain region is increased and defects of transistor characteristicsoccur as described above.

However, as in one embodiment of the present invention, addition ofdopant to an oxide semiconductor layer is performed in the state where agate insulating film is left so as not to expose the oxidesemiconductor; thus, the overetching of the oxide semiconductor layercan be prevented and excessive damage to the oxide semiconductor layercan be reduced. In addition, the interface between the oxidesemiconductor layer and the gate insulating film is kept clean.Therefore, the characteristics and reliability of the transistor can beimproved.

This embodiment can be implemented in combination with any of the aboveembodiments.

Embodiment 7

In this embodiment, a transistor which includes an oxide semiconductorlayer and has a structure different from those in Embodiments 5 and 6will be described. An oxide semiconductor in the oxide semiconductorlayer may be formed using an oxide semiconductor containing In, Sn, andZn (an In—Sn—Zn-based oxide semiconductor) or another oxidesemiconductor described in any of the other embodiments.

FIGS. 31A and 31B are a top view and a cross-sectional view of acoplanar transistor having a top-gate top-contact structure. FIG. 31A isthe top view of the transistor. FIG. 31B illustrates a cross section A-Balong dashed-dotted line A-B in FIG. 31A.

The transistor illustrated in FIG. 31B includes a substrate 1100; a baseinsulating film 1102 provided over the substrate 1100; a protectiveinsulating film 1104 provided in the periphery of the base insulatingfilm 1102; an oxide semiconductor layer 1106 that is provided over thebase insulating film 1102 and the protective insulating film 1104 andincludes a high-resistance region 1106 a and low-resistance regions 1106b; a gate insulating film 1108 provided over the oxide semiconductorlayer 1106; a gate electrode 1110 provided to overlap with the oxidesemiconductor layer 1106 with the gate insulating film 1108 interposedtherebetween; a sidewall insulating film 1112 provided in contact with aside surface of the gate electrode 1110; a pair of electrodes 1114provided in contact with at least the low-resistance regions 1106 b; aninterlayer insulating film 1116 provided to cover at least the oxidesemiconductor layer 1106, the gate electrode 1110, and the pair ofelectrodes 1114; and a wiring 1118 provided to be connected to at leastone of the pair of electrodes 1114 through an opening formed in theinterlayer insulating film 1116.

Although not illustrated, a protective film may be provided to cover theinterlayer insulating film 1116 and the wiring 1118. With the protectivefilm, a minute amount of leakage current generated by surface conductionof the interlayer insulating film 1116 can be reduced and thus theoff-state current of the transistor can be reduced.

This embodiment can be implemented in combination with any of the aboveembodiments.

Embodiment 8

In this embodiment, a transistor which includes an oxide semiconductorlayer and has a structure different from those in Embodiments 5 to 7will be described. Note that in this embodiment, the case where an oxidesemiconductor containing In, Sn, and Zn (an In—Sn—Zn-based oxidesemiconductor) is used as an oxide semiconductor in an oxidesemiconductor layer is described; however, another oxide semiconductordescribed in any of the other embodiments may be used.

FIGS. 32A and 32B are a top view and a cross-sectional view illustratinga structure of a transistor manufactured in this embodiment. FIG. 32A isthe top view of the transistor. FIG. 32B is a cross-sectional view alongdashed-dotted line A-B in FIG. 32A.

The transistor illustrated in FIG. 32B includes a substrate 1200; a baseinsulating film 1202 provided over the substrate 1200; an oxidesemiconductor layer 1206 provided over the base insulating film 1202; apair of electrodes 1214 in contact with the oxide semiconductor layer1206; a gate insulating film 1208 provided over the oxide semiconductorlayer 1206 and the pair of electrodes 1214; a gate electrode 1210provided to overlap with the oxide semiconductor layer 1206 with thegate insulating film 1208 interposed therebetween; an interlayerinsulating film 1216 provided to cover the gate insulating film 1208 andthe gate electrode 1210; wirings 1218 connected to the pair ofelectrodes 1214 through openings formed in the interlayer insulatingfilm 1216; and a protective film 1220 provided to cover the interlayerinsulating film 1216 and the wirings 1218.

As the substrate 1200, a glass substrate is used. As the base insulatingfilm 1202, a silicon oxide film is used. As the oxide semiconductorlayer 1206, an In—Sn—Zn-based oxide film is used. As the pair ofelectrodes 1214, a tungsten film is used. As the gate insulating film1208, a silicon oxide film is used. The gate electrode 1210 has astacked structure of a tantalum nitride film and a tungsten film. Theinterlayer insulating film 1216 has a stacked structure of a siliconoxynitride film and a polyimide film. The wirings 1218 have a stackedstructure in which a titanium film, an aluminum film, and a titaniumfilm are formed in this order. As the protective film 1220, a polyimidefilm is used.

Note that in the transistor having the structure illustrated in FIG.32A, the width of a portion where the gate electrode 1210 overlaps withone of the pair of electrodes 1214 is referred to as Lov. Similarly, thewidth of a portion of the pair of electrodes 1214, which does notoverlap with the oxide semiconductor layer 1206, is referred to as dW.

This embodiment can be implemented in combination with any of the aboveembodiments.

Embodiment 9

In this embodiment, one embodiment of a structure of a storage devicewill be described.

FIG. 11 and FIG. 12 are each a cross-sectional view of a storage device.In each of the storage devices illustrated in FIG. 11 and FIG. 12, aplurality of storage elements in a plurality of layers are formed in theupper portion, and a logic circuit 3004 is formed in the lower portion.As examples of the plurality of storage elements, a storage element 3170a and a storage element 3170 b are illustrated. For the storage element3170 a and the storage element 3170 b, a configuration similar to thatof the storage circuit 102 described in the above embodiment can beemployed, for example.

Note that a transistor 3171 a in the storage element 3170 a isillustrated as a representative. A transistor 3171 b in the storageelement 3170 b is illustrated as a representative. In the transistor3171 a and the transistor 3171 b, a channel formation region is formedin an oxide semiconductor layer. The structure of a transistor in whicha channel formation region is formed in an oxide semiconductor layer issimilar to that described in the above embodiment; thus, the descriptionthereof is omitted here.

An electrode 3501 a which is formed in the same layer as a sourceelectrode and a drain electrode of the transistor 3171 a is electricallyconnected to an electrode 3003 a through an electrode 3502 a. Anelectrode 3501 c which is formed in the same layer as a source electrodeand a drain electrode of the transistor 3171 b is electrically connectedto an electrode 3003 c through an electrode 3502 c.

The logic circuit 3004 includes a transistor 3001 in which asemiconductor material other than an oxide semiconductor is used as achannel formation region. The transistor 3001 can be obtained in such amanner that an element isolation insulating film 3106 is provided over asubstrate 3000 including a semiconductor material (e.g., silicon) and aregion which is to be a channel formation region is formed in a regionsurrounded by the element isolation insulating film 3106. Note that thetransistor 3001 may be a transistor in which a channel formation regionis formed in a semiconductor film such as a silicon film formed on aninsulating surface or a silicon film in an SOI substrate. A knownstructure can be employed for the structure of the transistor 3001;thus, the description thereof is omitted here.

A wiring 3100 a and a wiring 3100 b are formed between layers in whichthe transistor 3171 a is formed and layers in which the transistor 3001is formed. An insulating film 3140 a is provided between the wiring 3100a and the layers in which the transistor 3001 is formed, an insulatingfilm 3141 a is provided between the wiring 3100 a and the wiring 3100 b,and an insulating film 3142 a is provided between the wiring 3100 b andthe layers in which the transistor 3171 a is formed.

Similarly, a wiring 3100 c and a wiring 3100 d are formed between thelayers in which the transistor 3171 b is formed and the layers in whichthe transistor 3171 a is formed. An insulating film 3140 b is providedbetween the wiring 3100 c and the layers in which the transistor 3171 ais formed, an insulating film 3141 b is provided between the wiring 3100c and the wiring 3100 d, and an insulating film 3142 b is providedbetween the wiring 3100 d and the layers in which the transistor 3171 bis formed.

The insulating film 3140 a, the insulating film 3141 a, the insulatingfilm 3142 a, the insulating film 3140 b, the insulating film 3141 b, andthe insulating film 3142 b function as interlayer insulating films, andtheir surfaces are planarized.

Through the wiring 3100 a, the wiring 3100 b, the wiring 3100 c, and thewiring 3100 d, electrical connection between the storage elements,electrical connection between the logic circuit 3004 and the storageelement, and the like can be established.

An electrode 3303 included in the logic circuit 3004 can be electricallyconnected to a circuit provided in the upper portion.

For example, as illustrated in FIG. 11, the electrode 3303 can beelectrically connected to the wiring 3100 a through an electrode 3505.The wiring 3100 a can be electrically connected to an electrode 3501 bthrough an electrode 3503 a. In this manner, the wiring 3100 a and theelectrode 3303 can be electrically connected to the source or the drainof the transistor 3171 a. The electrode 3501 b can be electricallyconnected to an electrode 3003 b through an electrode 3502 b. Theelectrode 3003 b can be electrically connected to the wiring 3100 cthrough an electrode 3503 b.

FIG. 11 illustrates an example in which the electrode 3303 and thetransistor 3171 a are electrically connected to each other through thewiring 3100 a; however, one embodiment of the present invention is notlimited to this. The electrode 3303 and the transistor 3171 a may beelectrically connected to each other through the wiring 3100 b, or maybe electrically connected to each other through both the wiring 3100 aand the wiring 3100 b. Further, as illustrated in FIG. 12, the electrode3303 and the transistor 3171 a may be electrically connected to eachother through neither the wiring 3100 a nor the wiring 3100 b. In FIG.12, the electrode 3303 is electrically connected to the electrode 3003 bthrough an electrode 3503. The electrode 3003 b is electricallyconnected to the source or the drain of the transistor 3171 a. In thismanner, electrical connection between the electrode 3303 and thetransistor 3171 a can be established.

Note that FIG. 11 and FIG. 12 illustrate an example in which the twostorage elements (the storage element 3170 a and the storage element3170 b) are stacked; however, the number of stacked storage elements isnot limited to two.

FIG. 11 and FIG. 12 illustrate an example where two wiring layers, i.e.,a wiring layer in which the wiring 3100 a is formed and a wiring layerin which the wiring 3100 b is formed are provided between the layers inwhich the transistor 3171 a is formed and the layers in which thetransistor 3001 is formed; however, the number of wiring layers providedtherebetween is not limited to two. One wiring layer may be provided orthree or more wiring layers may be provided between the layers in whichthe transistor 3171 a is formed and the layers in which the transistor3001 is formed.

FIG. 11 and FIG. 12 illustrate an example where two wiring layers, i.e.,a wiring layer in which the wiring 3100 c is formed and a wiring layerin which the wiring 3100 d is formed are provided between the layers inwhich the transistor 3171 b is formed and the layers in which thetransistor 3171 a is formed; however, the number of wiring layersprovided therebetween is not limited to two. One wiring layer may beprovided or three or more wiring layers may be provided between thelayers in which the transistor 3171 b is formed and the layers in whichthe transistor 3171 a is formed.

This embodiment can be implemented in combination with any of the aboveembodiments.

Embodiment 10

In this embodiment, the field-effect mobility of the transistordescribed in the above embodiment will be described.

The actually measured field-effect mobility of an insulated gatetransistor can be lower than its original mobility because of a varietyof reasons; this phenomenon occurs not only in the case of using atransistor whose channel is formed in an oxide semiconductor layer. Oneof the reasons that reduce the mobility is a defect inside asemiconductor or a defect at the interface between the semiconductor andan insulating film. When a Levinson model is used, the field-effectmobility that is based on the assumption that no defect exists insidethe semiconductor can be calculated theoretically. In this embodiment,the field-effect mobility of an ideal oxide semiconductor without adefect inside the semiconductor is calculated theoretically, andcalculation results of characteristics of minute transistorsmanufactured using such an oxide semiconductor are shown.

Assuming that the original mobility and the measured field-effectmobility of a semiconductor are μ₀ and μ, respectively, and a potentialbarrier (such as a grain boundary) exists in the semiconductor, themeasured field-effect mobility μ can be expressed as the followingformula.

$\begin{matrix}{\mu = {\mu_{0}{\exp \left( {- \frac{E}{k\; T}} \right)}}} & \left\lbrack {{Formula}\mspace{14mu} 2} \right\rbrack\end{matrix}$

Here, E represents the height of the potential barrier, k represents theBoltzmann constant, and T represents the absolute temperature. When thepotential barrier is assumed to be attributed to a defect, the height Eof the potential barrier can be expressed as the following formulaaccording to the Levinson model.

$\begin{matrix}\begin{matrix}{E = \frac{e^{2}N^{2}}{8ɛ\; n}} \\{= \frac{e^{3}N_{t}^{2}}{8ɛ\; C_{ox}V_{g}}}\end{matrix} & \left\lbrack {{Formula}\mspace{14mu} 3} \right\rbrack\end{matrix}$

Here, e represents the elementary charge, N represents the averagedefect density per unit area in a channel, ∈ represents the permittivityof the semiconductor, n represents the number of carriers per unit areain the channel, C_(ox) represents the capacitance per unit area, V_(g)represents the gate voltage, and t represents the thickness of thechannel. Note that in the case where the thickness of the semiconductorlayer is less than or equal to 30 nm, the thickness of the channel maybe regarded as being the same as the thickness of the semiconductorlayer. The drain current I_(d) in a linear region can be expressed asthe following formula.

$\begin{matrix}{I_{d} = {\frac{W\; \mu \; V_{g}V_{d}C_{ox}}{L}{\exp \left( {- \frac{E}{k\; T}} \right)}}} & \left\lbrack {{Formula}\mspace{14mu} 4} \right\rbrack\end{matrix}$

Here, L represents the channel length and W represents the channelwidth, and L and W are each 10 μm. Further, V_(d) represents the drainvoltage (voltage between a source and a drain). When dividing both sidesof the above equation by V_(g) and then taking logarithms of both sides,the following formula can be obtained.

$\begin{matrix}\begin{matrix}{{\ln \left( \frac{I_{d}}{V_{g}} \right)} = {{\ln \left( \frac{W\; \mu \; V_{d}C_{ox}}{L} \right)} - \frac{E}{k\; T}}} \\{= {{\ln \left( \frac{W\; \mu \; V_{d}C_{ox}}{L} \right)} - \frac{e^{3}N_{t}^{2}}{8{kT}\; ɛ\; C_{ox}V_{g}}}}\end{matrix} & \left\lbrack {{Formula}\mspace{14mu} 5} \right\rbrack\end{matrix}$

The right side of Formula 5 is a function of V_(g). From the formula, itis found that the defect density N can be obtained from the slope of aline in a graph that is obtained by plotting actual measured values withln(I_(d)/V_(g)) as the ordinate and 1/V_(g) as the abscissa. That is,the defect density can be evaluated from the I_(d)-V_(g) characteristicsof the transistor. The defect density N of an oxide semiconductor inwhich the ratio of indium (In), tin (Sn), and zinc (Zn) is 1:1:1 isapproximately 1×10¹²/cm².

On the basis of the defect density obtained in this manner, μ₀ can becalculated to be 120 cm²/Vs from Formula 2 and Formula 3. The measuredmobility of an In—Sn—Zn-based oxide including a defect is approximately40 cm²/Vs. However, assuming that no defect exists inside thesemiconductor and at the interface between the semiconductor and aninsulating layer, the mobility μ₀ of the oxide semiconductor is expectedto be 120 cm²/Vs.

Note that even when no defect exists inside a semiconductor, scatteringat the interface between a channel and a gate insulating film adverselyaffects the transport property of the transistor. In other words, themobility μ₁ at a position that is distance x away from the interfacebetween the channel and the gate insulating film can be expressed as thefollowing formula.

$\begin{matrix}{\frac{1}{\mu_{1}} = {\frac{1}{\mu_{0}} + {\frac{D}{B}{\exp \left( {- \frac{x}{G}} \right)}}}} & \left\lbrack {{Formula}\mspace{14mu} 6} \right\rbrack\end{matrix}$

Here, D represents the electric field in the gate direction, and B and Gare constants. B and G can be obtained from actual measurement results;according to the above measurement results, B is 4.75×10⁷ cm/s and G is10 nm (the depth to which the influence of interface scatteringreaches). When D is increased (i.e., when the gate voltage isincreased), the second term of Formula 6 is increased and accordinglythe mobility μ₁ is decreased.

FIG. 19 shows calculation results of the mobility μ₂ of a transistorwhose channel is formed using an ideal oxide semiconductor without adefect inside the semiconductor. For the calculation, device simulationsoftware Sentaurus Device manufactured by Synopsys, Inc. was used, andthe band gap, the electron affinity, the relative permittivity, and thethickness of the oxide semiconductor were assumed to be 2.8 eV, 4.7 eV,15, and 15 nm, respectively. These values were obtained by measurementof a thin film that was formed by a sputtering method.

Further, the work functions of a gate, a source, and a drain wereassumed to be 5.5 eV, 4.6 eV, and 4.6 eV, respectively. The thickness ofa gate insulating film was assumed to be 100 nm, and the relativepermittivity thereof was assumed to be 4.1. The channel length and thechannel width were each assumed to be 10 μm, and the drain voltage V_(d)was assumed to be 0.1 V.

As shown in FIG. 19, the mobility has a peak of 100 cm²/Vs or more at agate voltage V_(g) that is a little over 1 V, and is decreased as thegate voltage becomes higher because the influence of interfacescattering is increased. Note that in order to reduce interfacescattering, it is desirable that a surface of the semiconductor layer beflat at the atomic level (atomic layer flatness).

Calculation results of characteristics of minute transistors formedusing an oxide semiconductor having such a mobility are shown in FIGS.20A to 20C, FIGS. 21A to 21C, and FIGS. 22A to 22C. FIGS. 23A and 23Billustrate cross-sectional structures of the transistors used for thecalculation. The transistors illustrated in FIGS. 23A and 23B eachinclude a semiconductor region 1303 a and a semiconductor region 1303 cthat have n⁺-type conductivity in an oxide semiconductor layer. Theresistivity of the semiconductor regions 1303 a and 1303 c is 2×10⁻³Ωcm.

The transistor in FIG. 23A is formed over a base insulating film 1301and an embedded insulator 1302 that is embedded in the base insulatingfilm 1301 and formed of aluminum oxide. The transistor includes thesemiconductor region 1303 a, the semiconductor region 1303 c, anintrinsic semiconductor region 1303 b that is placed between thesemiconductor regions 1303 a and 1303 c and serves as a channelformation region, and a gate electrode 1305. The width of the gateelectrode 1305 is 33 nm.

A gate insulating layer 1304 is formed between the gate electrode 1305and the semiconductor region 1303 b. A sidewall insulator 1306 a and asidewall insulator 1306 b are formed on both side surfaces of the gateelectrode 1305, and an insulator 1307 is formed over the gate electrode1305 so as to prevent a short circuit between the gate electrode 1305and another wiring. The sidewall insulator has a width of 5 nm. A source1308 a and a drain 1308 b are provided in contact with the semiconductorregion 1303 a and the semiconductor region 1303 c, respectively. Notethat the channel width of this transistor is 40 nm.

The transistor in FIG. 23B is the same as the transistor in FIG. 23A inthat it is formed over the base insulating film 1301 and the embeddedinsulator 1302 formed of aluminum oxide and that it includes thesemiconductor region 1303 a, the semiconductor region 1303 c, theintrinsic semiconductor region 1303 b provided therebetween, the gateelectrode 1305 having a width of 33 nm, the gate insulating layer 1304,the sidewall insulator 1306 a, the sidewall insulator 1306 b, theinsulator 1307, the source 1308 a, and the drain 1308 b.

The difference between the transistor in FIG. 23A and the transistor inFIG. 23B is the conductivity type of semiconductor regions under thesidewall insulators 1306 a and 1306 b. In the transistor in FIG. 23A,the semiconductor regions under the sidewall insulator 1306 a and thesidewall insulator 1306 b are part of the semiconductor region 1303 ahaving n⁺-type conductivity and part of the semiconductor region 1303 chaving n⁺-type conductivity, whereas in the transistor in FIG. 23B, thesemiconductor regions under the sidewall insulator 1306 a and thesidewall insulator 1306 b are part of the intrinsic semiconductor region1303 b. In other words, in the semiconductor layer of FIG. 23B, a regionhaving a width of L_(off) which overlaps with neither the semiconductorregion 1303 a (the semiconductor region 1303 c) nor the gate electrode1305 is provided. This region is called an offset region, and the widthL_(off) is called an offset length. As is seen from the drawing, theoffset length is equal to the width of the sidewall insulator 1306 a(the sidewall insulator 1306 b).

The other parameters used in calculation are as described above. For thecalculation, device simulation software Sentaurus Device manufactured bySynopsys, Inc. was used. FIGS. 20A to 20C show the gate voltage (V_(g):a potential difference between the gate and the source) dependence ofthe drain current (I_(d), a solid line) and the mobility (μ, a dottedline) of the transistor having the structure illustrated in FIG. 23A.The drain current I_(d) is obtained by calculation under the assumptionthat the drain voltage V_(d) (a potential difference between the drainand the source) is +1 V, and the mobility μ is obtained by calculationunder the assumption that the drain voltage V_(d) is +0.1 V.

FIG. 20A shows the gate voltage dependence of the transistor in the casewhere the thickness of the gate insulating film is 15 nm, FIG. 20B showsthat of the transistor in the case where the thickness of the gateinsulating film is 10 nm, and FIG. 20C shows that of the transistor inthe case where the thickness of the gate insulating film is 5 nm. As thegate insulating film is thinner, the drain current I_(d) in an off state(the off-state current) in particular is significantly decreased. Incontrast, there is no noticeable change in peak value of the mobility μand the drain current I_(d) in an on state (the on-state current).

FIGS. 21A to 21C show the gate voltage V_(g) dependence of the draincurrent I_(d) (a solid line) and the mobility μ (a dotted line) of thetransistor having the structure in FIG. 23B and an offset length L_(off)of 5 nm. The drain current I_(d) is obtained by calculation under theassumption that the drain voltage V_(d) is +1 V and the mobility μ isobtained by calculation under the assumption that the drain voltageV_(d) is +0.1 V. FIG. 21A shows the gate voltage dependence of thetransistor in the case where the thickness of the gate insulating filmis 15 nm, FIG. 21B shows that of the transistor in the case where thethickness of the gate insulating film is 10 nm, and FIG. 21C shows thatof the transistor in the case where the thickness of the gate insulatingfilm is 5 nm.

FIGS. 22A to 22C show the gate voltage V_(g) dependence of the draincurrent I_(d) (a solid line) and the mobility μ (a dotted line) of thetransistor having the structure in FIG. 23B and an offset length L_(off)of 15 nm. The drain current I_(d) is obtained by calculation under theassumption that the drain voltage V_(d) is +1 V and the mobility μ isobtained by calculation under the assumption that the drain voltageV_(d) is +0.1 V. FIG. 22A shows the gate voltage dependence of thetransistor in the case where the thickness of the gate insulating filmis 15 nm, FIG. 22B shows that of the transistor in the case where thethickness of the gate insulating film is 10 nm, and FIG. 22C shows thatof the transistor in the case where the thickness of the gate insulatingfilm is 5 nm.

In either of the structures, as the gate insulating film is thinner, theoff-state current is significantly decreased, whereas no noticeablechange arises in the peak value of the mobility μ and the on-statecurrent.

Note that the peak of the mobility μ is approximately 80 cm²/Vs in FIGS.20A to 20C, approximately 60 cm²/Vs in FIGS. 21A to 21C, andapproximately 40 cm²/Vs in FIGS. 22A to 22C; thus, the peak of themobility μ is decreased as the offset length L_(off) is increased.Further, the same applies to the off-state current. The on-state currentis also decreased as the offset length L_(off) is increased; however,the decrease in the on-state current is much more gradual than thedecrease in the off-state current.

Embodiment 11

In this embodiment, a transistor in which an oxide semiconductor filmcontaining In, Sn, and Zn as main components (an example of anIn—Sn—Zn-based oxide semiconductor film) is used for a channel formationregion will be described.

A transistor in which an oxide semiconductor film containing In, Sn, andZn as main components is used for a channel formation region can havefavorable characteristics by depositing the oxide semiconductor filmwhile heating a substrate or by performing heat treatment after theoxide semiconductor film is formed. Note that a main component refers toan element included in a composition at 5 atomic % or more.

When the oxide semiconductor film containing In, Sn, and Zn as maincomponents is formed while the substrate is intentionally heated, thefield-effect mobility of the transistor can be improved. Further, thethreshold voltage of the transistor can be positively shifted to makethe transistor normally off.

As an example, FIGS. 24A to 24C are graphs each showing electricalcharacteristics of a transistor in which an oxide semiconductor filmcontaining In, Sn, and Zn as main components and having a channel lengthL of 3 μm and a channel width W of 10 μm, and a gate insulating filmwith a thickness of 100 nm are used. Note that V_(d) was set to 10 V.

FIG. 24A is a graph showing characteristics of a transistor whose oxidesemiconductor film containing In, Sn, and Zn as main components wasformed by a sputtering method without heating a substrate intentionally.The field-effect mobility μ of the transistor was 18.8 cm²/Vsec. On theother hand, when the oxide semiconductor film containing In, Sn, and Znas main components is formed while heating the substrate intentionally,the field-effect mobility can be improved. FIG. 24B showscharacteristics of a transistor whose oxide semiconductor filmcontaining In, Sn, and Zn as main components was formed while heating asubstrate at 200° C. The field-effect mobility μ of the transistor was32.2 cm²/Vsec.

The field-effect mobility can be further improved by performing heattreatment after formation of the oxide semiconductor film containing In,Sn, and Zn as main components. FIG. 24C shows characteristics of atransistor whose oxide semiconductor film containing In, Sn, and Zn asmain components was formed by sputtering at 200° C. and then subjectedto heat treatment at 650° C. The field-effect mobility of the transistorwas 34.5 cm²/Vsec.

The intentional heating of the substrate can realize an effect ofreducing moisture taken into the oxide semiconductor film during theformation by sputtering. Further, the heat treatment after filmformation enables hydrogen, a hydroxyl group, or moisture to be releasedand removed from the oxide semiconductor film. In this manner, thefield-effect mobility can be improved. Such an improvement infield-effect mobility is presumed to be achieved not only by removal ofimpurities by dehydration or dehydrogenation but also by a reduction ininteratomic distance due to an increase in density. In addition, theoxide semiconductor can be crystallized by being highly purified byremoval of impurities from the oxide semiconductor. In the case of usingsuch a highly purified non-single-crystal oxide semiconductor, ideally,a field-effect mobility exceeding 100 cm²/Vsec is expected to berealized.

The oxide semiconductor film containing In, Sn, and Zn as maincomponents may be crystallized in the following manner: oxygen ions areimplanted into the oxide semiconductor film, hydrogen, a hydroxyl group,or moisture included in the oxide semiconductor is released by heattreatment, and the oxide semiconductor is crystallized through the heattreatment or by another heat treatment performed later. By suchcrystallization treatment or recrystallization treatment, anon-single-crystal oxide semiconductor having favorable crystallinitycan be obtained.

The intentional heating of the substrate during film formation and/orthe heat treatment after the film formation contributes not only toimproving field-effect mobility but also to making the transistornormally off. In a transistor in which an oxide semiconductor filmcontaining In, Sn, and Zn as main components and is formed withoutheating a substrate intentionally is used as a channel formation region,the threshold voltage tends to be shifted negatively. However, when theoxide semiconductor film formed while heating the substrateintentionally is used, the problem of the negative shift of thethreshold voltage can be solved. That is, the threshold voltage isshifted so that the transistor becomes normally off; this tendency canbe confirmed by comparison between FIGS. 24A and 24B.

Note that the threshold voltage can also be controlled by changing theratio of In, Sn, and Zn; when the composition ratio of In, Sn, and Zn is2:1:3, a normally-off transistor can be achieved. In addition, an oxidesemiconductor film having high crystallinity can be achieved by settingthe composition ratio of a target as follows: In:Sn:Zn=2:1:3.

The temperature of the intentional heating of the substrate or thetemperature of the heat treatment is 150° C. or higher, preferably 200°C. or higher, further preferably 400° C. or higher. When film formationor heat treatment is performed at a high temperature, the transistor canbe normally off.

By intentionally heating the substrate during film formation and/or byperforming heat treatment after the film formation, the stabilityagainst a gate-bias stress can be increased. For example, when a gatebias is applied with an intensity of 2 MV/cm at 150° C. for one hour,drift of the threshold voltage can be less than ±1.5 V, preferably lessthan ±1.0 V.

A BT test was performed on the following two transistors: Sample 1 onwhich heat treatment was not performed after formation of an oxidesemiconductor film, and Sample 2 on which heat treatment at 650° C. wasperformed after formation of an oxide semiconductor film.

First, V_(g)-I_(d) characteristics of the transistors were measured at asubstrate temperature of 25° C. and V_(d) of 10 V. Then, the substratetemperature was set to 150° C. and V_(d) was set to 0.1 V. After that,V_(g) of 20 V was applied so that the intensity of an electric fieldapplied to the gate insulating film was 2 MV/cm, and the condition waskept for one hour. Next, V_(g) was set to 0 V. Then, V_(g)-I_(d)characteristics of the transistors were measured at a substratetemperature of 25° C. and V_(d) of 10 V. This process is called apositive BT test.

In a similar manner, first, V_(g)-I_(d) characteristics of thetransistors were measured at a substrate temperature of 25° C. and V_(d)of 10 V. Then, the substrate temperature was set to 150° C. and V_(d)was set to 0.1 V. After that, V_(g) of −20 V was applied so that theintensity of an electric field applied to the gate insulating film was−2 MV/cm, and the condition was kept for one hour. Next, V_(g) was setto 0 V. Then, V_(g)-I_(d) characteristics of the transistors weremeasured at a substrate temperature of 25° C. and V_(d) of 10 V. Thisprocess is called a negative BT test.

FIGS. 25A and 25B show results of the positive BT test and the negativeBT test, respectively, of Sample 1. FIGS. 26A and 26B show results ofthe positive BT test and the negative BT test, respectively, of Sample2.

The amount of shift in threshold voltage of Sample 1 due to the positiveBT test and that due to the negative BT test were 1.80 V and 0.42 V,respectively. The amount of shift in threshold voltage of Sample 2 dueto the positive BT test and that due to the negative BT test were 0.79 Vand 0.76 V, respectively. It is found that, in each of Sample 1 andSample 2, the amount of shift in threshold voltage between before andafter the BT tests is small and the reliability is high.

The heat treatment can be performed in an oxygen atmosphere;alternatively, the heat treatment may be performed first in anatmosphere of nitrogen or an inert gas or under reduced pressure, andthen in an atmosphere including oxygen. Oxygen is supplied to the oxidesemiconductor after dehydration or dehydrogenation, whereby the effectof the heat treatment can be further increased. As a method forsupplying oxygen after dehydration or dehydrogenation, a method in whichoxygen ions are accelerated by an electric field and implanted into theoxide semiconductor film may be employed.

A defect due to oxygen deficiency is easily caused in the oxidesemiconductor or at an interface between the oxide semiconductor and astacked film; however, when excess oxygen is included in the oxidesemiconductor by the heat treatment, oxygen deficiency caused constantlycan be compensated for with excess oxygen. The excess oxygen is mainlyoxygen existing between lattices. When the concentration of oxygen isset in the range of 1×10¹⁶/cm³ to 2×10²⁰/cm³, excess oxygen can beincluded in the oxide semiconductor without causing crystal distortionor the like.

When heat treatment is performed so that at least part of the oxidesemiconductor includes crystal, a more stable oxide semiconductor filmcan be obtained. For example, when an oxide semiconductor film which isformed by sputtering using a target having a composition ratio ofIn:Sn:Zn=1:1:1 without heating a substrate intentionally is analyzed byX-ray diffraction (XRD), a halo pattern is observed. The formed oxidesemiconductor film can be crystallized by being subjected to heattreatment. The temperature of the heat treatment can be set asappropriate; when the heat treatment is performed at 650° C., forexample, a clear diffraction peak can be observed with X-raydiffraction.

An XRD analysis of an In—Sn—Zn-based oxide film was conducted. The XRDanalysis was conducted using an X-ray diffractometer D8 ADVANCEmanufactured by Bruker AXS, and measurement was performed by anout-of-plane method.

Sample A and Sample B were prepared and the XRD analysis was performedthereon. A method for manufacturing Sample A and Sample B will bedescribed below.

First, an In—Sn—Zn-based oxide film with a thickness of 100 nm wasformed over a quartz substrate that had been subjected todehydrogenation treatment.

The In—Sn—Zn-based oxide film was formed with a sputtering apparatuswith a power of 100 W (DC) in an oxygen atmosphere. An In—Sn—Zn—O targethaving an atomic ratio of In:Sn:Zn=1:1:1 was used as a target. Note thatthe substrate heating temperature in film formation was set at 200° C. Asample manufactured in this manner was used as Sample A.

Next, a sample manufactured by a method similar to that of Sample A wassubjected to heat treatment at 650° C. As the heat treatment, heattreatment in a nitrogen atmosphere was first performed for one hour andheat treatment in an oxygen atmosphere was further performed for onehour without lowering the temperature. A sample manufactured in thismanner was used as Sample B.

FIG. 27 shows XRD spectra of Sample A and Sample B. No peak derived fromcrystal was observed in Sample A, whereas peaks derived from crystalwere observed when 2θ was around 35 deg. and at 37 deg. to 38 deg. inSample B.

As described above, by intentionally heating a substrate duringdeposition of an oxide semiconductor containing In, Sn, and Zn as maincomponents and/or by performing heat treatment after the deposition,characteristics of a transistor can be improved.

These substrate heating and heat treatment have an effect of preventinghydrogen and a hydroxyl group, which are unfavorable impurities for anoxide semiconductor, from being included in the film or an effect ofremoving hydrogen and a hydroxyl group from the film. That is, an oxidesemiconductor can be highly purified by removing hydrogen serving as adonor impurity from the oxide semiconductor, whereby a normally-offtransistor can be obtained. The high purification of an oxidesemiconductor enables the off-state current of the transistor to be 1aA/μm or lower. Here, the unit of the off-state current representscurrent per micrometer of a channel width.

FIG. 28 shows a relation between the off-state current of a transistorand the inverse of substrate temperature (absolute temperature) atmeasurement of the off-state current. Here, for simplicity, thehorizontal axis represents a value (1000/T) obtained by multiplying aninverse of substrate temperature at measurement by 1000. As shown inFIG. 28, the off-state current can be 1 aA/μm (1×10⁻¹⁸ A/μm) or lower,100 zA/μm (1×10⁻¹⁹ A/μm) or lower, and 1 zA/μm (1×10⁻²¹ A/μm) or lowerwhen the substrate temperature is 125° C., 85° C., and room temperature(27° C.), respectively. Preferably, the off-state current can be 0.1aA/μm (1×10⁻¹⁹ A/μm) or lower, 10 zA/μm (1×10⁻²° A/μm) or lower, and 0.1zA/μm (1×10⁻²² A/μm) or lower at 125° C., 85° C., and room temperature,respectively.

Note that in order to prevent hydrogen and moisture from being includedin the oxide semiconductor film during formation of the film, it ispreferable to increase the purity of a sputtering gas by sufficientlysuppressing leakage from the outside of a deposition chamber anddegasification through an inner wall of the deposition chamber. Forexample, a gas with a dew point of −70° C. or lower is preferably usedas the sputtering gas in order to prevent moisture from being includedin the film. In addition, it is preferable to use a target which ishighly purified so as not to include impurities such as hydrogen andmoisture. Although it is possible to remove moisture from a film of anoxide semiconductor containing In, Sn, and Zn as main components by heattreatment, a film which does not include moisture originally ispreferably formed because moisture is released from the oxidesemiconductor containing In, Sn, and Zn as main components at a highertemperature than from an oxide semiconductor containing In, Ga, and Znas main components.

The relation between the substrate temperature and electricalcharacteristics of a transistor using Sample B, on which heat treatmentat 650° C. was performed after formation of the oxide semiconductorfilm, was evaluated.

The transistor used for the measurement has a channel length L of 3 μm,a channel width W of 10 nm, Lov of 0 μm, and dW of 0 μm. Note that V_(d)was set to 10 V. Note that the substrate temperature was −40° C., −25°C., 25° C., 75° C., 125° C., and 150° C. Here, in the transistor, thewidth of a portion where a gate electrode overlaps with one of a pair ofelectrodes is referred to as Lov, and the width of a portion of the pairof electrodes, which does not overlap with an oxide semiconductor film,is referred to as dW.

FIG. 29 shows the V_(g) dependence of I_(d) (a solid line) andfield-effect mobility (a dotted line). FIG. 30A shows a relation betweenthe substrate temperature and the threshold voltage, and FIG. 30B showsa relation between the substrate temperature and the field-effectmobility.

From FIG. 30A, it is found that the threshold voltage gets lower as thesubstrate temperature increases. Note that the threshold voltage isdecreased from 1.09 V to −0.23 V in the range from −40° C. to 150° C.

From FIG. 30B, it is found that the field-effect mobility gets lower asthe substrate temperature increases. Note that the field-effect mobilityis decreased from 36 cm²/Vs to 32 cm²/Vs in the range from −40° C. to150° C. Thus, it is found that variation in electrical characteristicsis small in the above temperature range.

In a transistor in which such an oxide semiconductor containing In, Sn,and Zn as main components is used as a channel formation region, afield-effect mobility of 30 cm²/Vsec or higher, preferably 40 cm²/Vsecor higher, further preferably 60 cm²/Vsec or higher can be obtained withthe off-state current maintained at 1 aA/μm or lower, which can achieveon-state current needed for an LSI. For example, in an FET where L/W is33 nm/40 nm, an on-state current of 12 μA or higher can flow when thegate voltage is 2.7 V and the drain voltage is 1.0 V. In addition,sufficient electrical characteristics can be ensured in a temperaturerange needed for operation of a transistor. With such characteristics,an integrated circuit having a novel function can be realized withoutdecreasing the operation speed even when a transistor including an oxidesemiconductor is provided in an integrated circuit formed using a S1semiconductor.

This embodiment can be implemented in combination with any of the aboveembodiments.

Example 1

With the use of a signal processing circuit according to one embodimentof the present invention, an electronic device with low powerconsumption can be provided. In particular, in the case of a portableelectronic device which has difficulty in continuously receiving power,when a signal processing circuit with low power consumption according toone embodiment of the present invention is added as a component of thedevice, an advantage in increasing the continuous operation time can beobtained. Further, by the use of a transistor with small off-statecurrent, redundant circuit design which is needed to cover a failurecaused by large off-state current is unnecessary; therefore, theintegration degree of the signal processing circuit can be increased,and a signal processing circuit having higher functionality can beformed.

The signal processing circuit according to one embodiment of the presentinvention can be used for display devices, personal computers, or imagereproducing devices provided with recording media (typically, deviceswhich reproduce the content of recording media such as digital versatilediscs (DVDs) and have displays for displaying the reproduced images). Inaddition, as an electronic device which can employ the signal processingcircuit according to one embodiment of the present invention, mobilephones, portable game machines, portable information terminals, e-bookreaders, cameras such as video cameras and digital still cameras,goggle-type displays (head mounted displays), navigation systems, audioreproducing devices (e.g., car audio systems and digital audio players),copiers, facsimiles, printers, multifunction printers, automated tellermachines (ATM), vending machines, and the like can be given.

The case where a signal processing circuit according to one embodimentof the present invention is applied to electronic devices such as amobile phone, a smartphone, and an e-book reader will be described.

FIG. 13 is a block diagram of a portable electronic device. The portableelectronic device illustrated in FIG. 13 includes an RF circuit 421, ananalog baseband circuit 422, a digital baseband circuit 423, a battery424, a power supply circuit 425, an application processor 426, a flashmemory 430, a display controller 431, a memory circuit 432, a display433, a touch sensor 439, an audio circuit 437, a keyboard 438, and thelike. The display 433 includes a display portion 434, a source driver435, and a gate driver 436. The application processor 426 includes a CPU427, a DSP 428, and an interface 429. The signal processing circuitdescribed in the above embodiment is employed for the CPU 427, wherebypower consumption can be reduced. An SRAM or a DRM is used in the memorycircuit 432 in general; however, the storage device described in theabove embodiment is used in the memory circuit 432, whereby powerconsumption can be reduced.

FIG. 14 is a block diagram illustrating a configuration of the memorycircuit 432. The memory circuit 432 includes a storage device 442, astorage device 443, a switch 444, a switch 445, and a memory controller441.

First, image data is received by the portable electronic device or isformed by the application processor 426. This image data is stored inthe storage device 442 through the switch 444. Then, image data outputthrough the switch 444 is sent to the display 433 through the displaycontroller 431. The display 433 displays an image using the image data.

If a displayed image is not changed as in the case of a still image,image data read from the storage device 442 continues to be sent to thedisplay controller 431 through the switch 445 at a frequency ofapproximately 30 Hz to 60 Hz in general. When operation for rewriting animage displayed on a screen is performed by a user, new image data isformed by the application processor 426 and is stored in the storagedevice 443 through the switch 444. While storing of this new image datain the storage device 443 is performed, image data is periodically readfrom the storage device 442 through the switch 445.

When the storing of new image data in the storage device 443 iscompleted, from the following frame period, the new image data stored inthe storage device 443 is read and sent to the display 433 through theswitch 445 and the display controller 431. The display 433 displays animage using the sent new image data.

Reading of this image data continues until the following new data isstored in the storage device 442. In this manner, writing and reading ofimage data are performed to/from the storage device 442 and the storagedevice 443 alternately, and an image is displayed by the display 433.

The storage device 442 and the storage device 443 are not necessarilydifferent storage devices; a memory region included in one storagedevice may be divided to be used by the storage device 442 and thestorage device 443. The storage device described in the above embodimentis employed for these storage devices, whereby power consumption can bereduced.

FIG. 15 is a block diagram of an e-book reader. The e-book readerincludes a battery 451, a power supply circuit 452, a microprocessor453, a flash memory 454, an audio circuit 455, a keyboard 456, a memorycircuit 457, a touch panel 458, a display 459, and a display controller460. The signal processing circuit described in the above embodiment isemployed for the microprocessor 453, whereby power consumption can bereduced. Further, the storage device described in the above embodimentis employed for the memory circuit 457, whereby power consumption can bereduced.

For example, in the case where a user uses a highlighting function ofchanging a display color, drawing an underline, using a bold font,changing the type of letter, or the like in a specific portion in e-bookdata so that the specific portion is in clear contrast to the otherportions, data of the portion specified by the user in the e-book dataneeds to be stored. The memory circuit 457 has a function of storingsuch data temporarily. Note that in the case where such data is held fora long time, it may be copied to the flash memory 454.

This example can be implemented in combination with any of the aboveembodiments.

This application is based on Japanese Patent Application serial no.2011-000435 filed with Japan Patent Office on Jan. 5, 2011, and JapanesePatent Application serial no. 2011-113414 filed with Japan Patent Officeon May 20, 2011, the entire contents of which are hereby incorporated byreference.

1. (canceled)
 2. A storage device comprising: a first storage element; asecond storage element; and a transistor configured to control a supplyof a power supply voltage to the first storage element and the secondstorage element, wherein the transistor comprises a channel formationregion comprising an oxide semiconductor material.
 3. The storage deviceaccording to claim 2, wherein the oxide semiconductor material is anIn—Ga—Zn-based oxide.
 4. The storage device according to claim 2,wherein the oxide semiconductor material is an In—Sn—Zn-based oxide. 5.The storage device according to claim 2, wherein the power supplyvoltage is VDD.
 6. The storage device according to claim 2, wherein thepower supply voltage is VSS.
 7. A storage device comprising: a firststorage element; a second storage element; and a first transistorconfigured to control a supply of a power supply voltage to the firststorage element and the second storage element, wherein the firsttransistor comprises a channel formation region comprising an oxidesemiconductor material, wherein at least one of the first storageelement and the second storage element comprises: a second transistor;and a third transistor comprising a channel formation region, thechannel region comprising an oxide semiconductor material, wherein oneof a source and a drain of the third transistor is electricallyconnected to a gate of the second transistor.
 8. The storage deviceaccording to claim 7, wherein each of the oxide semiconductor materialof the first transistor and the oxide semiconductor material of thethird transistor is an In—Ga—Zn-based oxide.
 9. The storage deviceaccording to claim 7, wherein each of the oxide semiconductor materialof the first transistor and the oxide semiconductor material of thethird transistor is an In—Sn—Zn-based oxide.
 10. The storage deviceaccording to claim 7, wherein the power supply voltage is VDD.
 11. Thestorage device according to claim 7, wherein the power supply voltage isVSS.
 12. A storage device comprising: a first storage element; a secondstorage element; and a first transistor configured to control a supplyof a power supply voltage to the first storage element and the secondstorage element, wherein the first transistor comprises a channelformation region comprising an oxide semiconductor material, wherein atleast one of the first storage element and the second storage elementcomprises: a second transistor; a third transistor comprising a channelformation region, the channel region comprising an oxide semiconductormaterial, wherein one of a source and a drain of the third transistor iselectrically connected to a gate of the second transistor; and a storagecircuit configured to hold data only in a period during which a powersupply voltage supplied.
 13. The storage device according to claim 12,wherein each of the oxide semiconductor material of the first transistorand the oxide semiconductor material of the third transistor is anIn—Ga—Zn-based oxide.
 14. The storage device according to claim 12,wherein each of the oxide semiconductor material of the first transistorand the oxide semiconductor material of the third transistor is anIn—Sn—Zn-based oxide.
 15. The storage device according to claim 12,wherein the power supply voltage whose supply is controlled by the firsttransistor is VDD.
 16. The storage device according to claim 12, whereinthe power supply voltage whose supply is controlled by the firsttransistor is VSS.